Annealing Induced Saturation in Electron Concentration for V-Doped CdO

• Main Authors: Yajie Li, Guibin Chen, Kinman Yu, Wladyslaw Walukiewicz, Weiping Gong
• Format: Article
• Language: English
• Published: MDPI AG 2021-09-01
• Series: Crystals
• Subjects: rapid thermal annealing; Hall Effect properties; Fermi stabilization energy; amphoteric defects model
• Online Access: https://www.mdpi.com/2073-4352/11/9/1079
• ISSN: 2073-4352

As-grown Ar-deposited Cd_1−xV_xO and Ar/O₂-deposited Cd_1−yV_yO feature lower and higher electron concentrations than 4 × 10²⁰ cm⁻³, respectively. After isothermal and isochronal annealing under N₂ ambient, we find that the two series exhibit a decrease or increase in electron concentrations until ~4 × 10²⁰ cm⁻³ which is close to Fermi stabilization energy (<i>E_FS</i>) level of CdO, with the assistance of native defects. An amphoteric defects model is used to explain the changing trends in electron concentrations. The tendencies in mobility further confirm our results. This work may provide some strategies to predict the electrical properties in CdO.