Modeling, Design, and Fabrication of Self-Doping Si1−xGex/Si Multiquantum Well Material for Infrared Sensing

Modeling, Design, and Fabrication of Self-Doping Si1−xGex/Si Multiquantum Well Material for Infrared Sensing

The paper presents the study of band distributions and thermoelectric properties of self-doping Si1−xGex/Si multiquantum well material for infrared detection. The simulations of different structures (including boron doping, germanium concentrations, and SiGe layer thickness) have been conducted. The...

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Bibliographic Details
Main Authors:	Bo Jiang, Dandan Gu, Yulong Zhang, Yan Su, Yong He, Tao Dong
Format:	Article
Language:	English
Published:	Hindawi Limited 2016-01-01
Series:	Journal of Sensors
Online Access:	http://dx.doi.org/10.1155/2016/6584650

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