Dual Laser Beam Processing of Semiconducting Thin Films by Excited State Absorption

We present a unique dual laser beam processing approach based on excited state absorption by structuring 200 nm thin zinc oxide films sputtered on fused silica substrates. The combination of two pulsed nanosecond-laser beams with different photon energies—one below and one above the zinc oxide band...

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Bibliographic Details
Main Authors: Christoph Wenisch, Sebastian Engel, Stephan Gräf, Frank A. Müller
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/14/5/1256
Description
Summary:We present a unique dual laser beam processing approach based on excited state absorption by structuring 200 nm thin zinc oxide films sputtered on fused silica substrates. The combination of two pulsed nanosecond-laser beams with different photon energies—one below and one above the zinc oxide band gap energy—allows for a precise, efficient, and homogeneous ablation of the films without substrate damage. Based on structuring experiments in dependence on laser wavelength, pulse fluence, and pulse delay of both laser beams, a detailed concept of energy transfer and excitation processes during irradiation was developed. It provides a comprehensive understanding of the thermal and electronic processes during ablation. To quantify the efficiency improvements of the dual-beam process compared to single-beam ablation, a simple efficiency model was developed.
ISSN:1996-1944