Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces

Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces

For realization of new informative systems, the memristor working like synapse has drawn much attention. We developed isolated high-density Fe3O4 nanocrystals on Ge nuclei/Si with uniform and high resistive switching performance using low-temperature growth. The Fe3O4 nanocrystals on Ge nuclei had a...

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Bibliographic Details
Main Authors: Takafumi Ishibe, Yoshiki Maeda, Tsukasa Terada, Nobuyasu Naruse, Yutaka Mera, Eiichi Kobayashi, Yoshiaki Nakamura
Format: Article
Language:English
Published: Taylor & Francis Group 2020-01-01
Series:Science and Technology of Advanced Materials
Subjects:
memristor
interface control
nanocrystal
iron oxide
silicon
germanium
resistive switching characteristics
Online Access:http://dx.doi.org/10.1080/14686996.2020.1736948

Internet

http://dx.doi.org/10.1080/14686996.2020.1736948

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