Effect of Photoconductive Properties of SiNx Passivation Film on Anti-PID Performance of Photovoltaic Cells and Modules

• Main Authors: Xianfang GOU, Xiaoyan LI, Weitao FAN, Qingsong HUANG, Su ZHOU, Xixi HUANG, Jingwen YU
• Format: Article
• Language: English
• Published: Kaunas University of Technology 2018-05-01
• Series: Medžiagotyra
• Subjects: potential-induced degradation; sinx film; solar cell; refractive index
• Online Access: http://matsc.ktu.lt/index.php/MatSc/article/view/17171

We investigated the impact of the photoconductive properties of crystalline silicon solar cells, having a SiN_x passivation film, on potential induced degradation (PID) using voltage-corona (V-Q) and self-adjusting stead state (SASS) tests. The experimental results show that the conductivity of SiN_x on the cell surface was gradually enhanced by the increase in refractive index, which effectively decreased the accumulated charge on the cell surface. Thus, changes in the conductivity of SiN_x were found to be the cause of the different PID performance of the modules. The present work provides a theoretical basis for solving the PID problem of solar modules and power stations, and the exploration of the V-Q and SASS techniques provides a new, convenient method and corresponding basis for testing the PID performance of solar cells during industrial production. <p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.24.2.17171">http://dx.doi.org/10.5755/j01.ms.24.2.17171</a></p>