Synthesis and Fabrication of In2O3: CdO Nanoparticles for NO2 Gas Sensor
The physical and morphological characteristics of porous silicon (PS) synthesized via gas sensor was assessed by electrochemical etching for a Si wafer in diluted HF acid in water (1:4) at different etching times and different currents. The morphology for PS wafers by AFM show that the average pore...
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College of Science for Women, University of Baghdad
2018-09-01
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| Online Access: | http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/2475 |
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doaj-d83f018ca7ac4d5c93da0ea6ab7f36de2020-11-24T21:28:35ZaraCollege of Science for Women, University of BaghdadBaghdad Science Journal2078-86652411-79862018-09-0115310.21123/bsj.15.3.292-299Synthesis and Fabrication of In2O3: CdO Nanoparticles for NO2 Gas SensorBaghdad Science JournalThe physical and morphological characteristics of porous silicon (PS) synthesized via gas sensor was assessed by electrochemical etching for a Si wafer in diluted HF acid in water (1:4) at different etching times and different currents. The morphology for PS wafers by AFM show that the average pore diameter varies from 48.63 to 72.54 nm with increasing etching time from 5 to 15min and from 72.54 to 51.37nm with increasing current from 10 to 30 mA. From the study, it was found that the gas sensitivity of In2O3: CdO semiconductor, against NO2 gas, directly correlated to the nanoparticles size, and its sensitivity increases with increasing operating temperature. http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/2475AFM, Gas Sensor, Metal Oxide Semiconductor, Porous Silicon |
| collection |
DOAJ |
| language |
Arabic |
| format |
Article |
| sources |
DOAJ |
| author |
Baghdad Science Journal |
| spellingShingle |
Baghdad Science Journal Synthesis and Fabrication of In2O3: CdO Nanoparticles for NO2 Gas Sensor Baghdad Science Journal AFM, Gas Sensor, Metal Oxide Semiconductor, Porous Silicon |
| author_facet |
Baghdad Science Journal |
| author_sort |
Baghdad Science Journal |
| title |
Synthesis and Fabrication of In2O3: CdO Nanoparticles for NO2 Gas Sensor |
| title_short |
Synthesis and Fabrication of In2O3: CdO Nanoparticles for NO2 Gas Sensor |
| title_full |
Synthesis and Fabrication of In2O3: CdO Nanoparticles for NO2 Gas Sensor |
| title_fullStr |
Synthesis and Fabrication of In2O3: CdO Nanoparticles for NO2 Gas Sensor |
| title_full_unstemmed |
Synthesis and Fabrication of In2O3: CdO Nanoparticles for NO2 Gas Sensor |
| title_sort |
synthesis and fabrication of in2o3: cdo nanoparticles for no2 gas sensor |
| publisher |
College of Science for Women, University of Baghdad |
| series |
Baghdad Science Journal |
| issn |
2078-8665 2411-7986 |
| publishDate |
2018-09-01 |
| description |
The physical and morphological characteristics of porous silicon (PS) synthesized via gas sensor was assessed by electrochemical etching for a Si wafer in diluted HF acid in water (1:4) at different etching times and different currents. The morphology for PS wafers by AFM show that the average pore diameter varies from 48.63 to 72.54 nm with increasing etching time from 5 to 15min and from 72.54 to 51.37nm with increasing current from 10 to 30 mA.
From the study, it was found that the gas sensitivity of In2O3: CdO semiconductor, against NO2 gas, directly correlated to the nanoparticles size, and its sensitivity increases with increasing operating temperature.
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| topic |
AFM, Gas Sensor, Metal Oxide Semiconductor, Porous Silicon |
| url |
http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/2475 |
| work_keys_str_mv |
AT baghdadsciencejournal synthesisandfabricationofin2o3cdonanoparticlesforno2gassensor |
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