In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tet...

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Bibliographic Details
Main Authors: Youfeng Lai, Lixue Xia, Qingfang Xu, Qizhong Li, Kai Liu, Meijun Yang, Song Zhang, Mingxu Han, Takashi Goto, Lianmeng Zhang, Rong Tu
Format: Article
Language:English
Published: MDPI AG 2020-01-01
Series:Materials
Subjects:
n-doped &amp
lt
110&amp
gt
-oriented 3c-sic bulk
preferred orientation
conductive sic
halide laser cvd
Online Access:https://www.mdpi.com/1996-1944/13/2/410

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