| Summary: | Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl<sub>4</sub>) and methane (CH<sub>4</sub>) as precursors, along with nitrogen (N<sub>2</sub>) as a dopant. We investigated the effect of the volume fraction of nitrogen (<i>ϕ</i><sub>N2</sub>) on the preferred orientation, microstructure, electrical conductivity (<i>σ</i>), deposition rate (<i>R</i><sub>dep</sub>), and optical transmittance. The preference of 3C-SiC for the <110> orientation increased with increasing <i>ϕ</i><sub>N2</sub>. The <i>σ</i> value of the N-doped 3C-SiC bulk substrates first increased and then decreased with increasing <i>ϕ</i><sub>N2</sub>, reaching a maximum value of 7.4 × 10<sup>2</sup> S/m at <i>ϕ</i><sub>N2</sub> = 20%. <i>R</i><sub>dep</sub> showed its highest value (3000 μm/h) for the undoped sample and decreased with increasing <i>ϕ</i><sub>N2</sub>, reaching 1437 μm/h at <i>ϕ</i><sub>N2</sub> = 30%. The transmittance of the N-doped 3C-SiC bulks decreased with <i>ϕ</i><sub>N2</sub> and showed a declining trend at wavelengths longer than 1000 nm. Compared with the previously prepared <111>-oriented N-doped 3C-SiC, the high-speed preparation of <110>-oriented N-doped 3C-SiC bulks further broadens its application field.
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