Memory Operation of Z²-FET Without Selector at High Temperature

• Main Authors: S. Kwon, C. Navarro, F. Gamiz, S. Cristoloveanu, Y.-T. Kim, J. Ahn
• Format: Article
• Language: English
• Published: IEEE 2021-01-01
• Series: IEEE Journal of the Electron Devices Society
• Subjects: Matrix memory operation; high temperature; Z²-FET; 1T-DRAM
• Online Access: https://ieeexplore.ieee.org/document/9471808/

The electrical performance of Z²-FET and memory operations of matrix are demonstrated at high temperatures up to 125 °C. The sharp subthreshold slope is maintained and the reliable operation is ensured within the memory window of 229 mV even though the turn on voltage of ‘0’- and ‘1’-states are shifted to lower voltage. The ‘0’-state current remains low while the ‘1’-state current gradually increases as the temperature increases leading to higher current margin. At the elevated temperature, the potential barriers are slightly reduced but does not collapse, which leads to the successful memory operation. However, increasing the temperature over 125 °C, the potential barrier at the ‘0’-state is significantly reduced and causes the failure of memory operation with high ‘0’-state current. The matrix demonstrates reliable memory operations without using selector circuits even at 125 °C.