Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth

Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth

Presented work focuses the attention on two regions of MOS structure placed in the vicinity of the semiconductor/dielectric interface, in particular: on part of dielectric layer and thin layer of the substrate. In the presented work the application of absorption as a tool that can vary the absorptio...

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Bibliographic Details
Main Author:	Paweł Borowicz
Format:	Article
Language:	English
Published:	Hindawi Limited 2016-01-01
Series:	Journal of Spectroscopy
Online Access:	http://dx.doi.org/10.1155/2016/1617063

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