Analysis the scatter parameter of SOI RF switch with different design structure

Based on commercial 0.2 μm SOI RF process platform, the influence of stack, width, bias resistance and bias voltage on scatter parameter characteristics of test structure for SOI RF switch application is investigated, including series branch, shunt branch, single-pole-single-throw, and single-pole-d...

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Bibliographic Details
Main Authors:	Xin Haiwei, Liu Zhangli
Format:	Article
Language:	zho
Published:	National Computer System Engineering Research Institute of China 2019-02-01
Series:	Dianzi Jishu Yingyong
Subjects:	SOI RF switch scatter parameter IL isolation
Online Access:	http://www.chinaaet.com/article/3000097346

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spelling	doaj-d5fa3b2713954d88b6345dd3f36ff2702020-11-24T21:21:47ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982019-02-01452161910.16157/j.issn.0258-7998.1817743000097346Analysis the scatter parameter of SOI RF switch with different design structureXin Haiwei0Liu Zhangli1Shanghai Huahong Grace Semiconductor Manufacturing Corporation，Shanghai 201203，ChinaShanghai Huahong Grace Semiconductor Manufacturing Corporation，Shanghai 201203，ChinaBased on commercial 0.2 μm SOI RF process platform, the influence of stack, width, bias resistance and bias voltage on scatter parameter characteristics of test structure for SOI RF switch application is investigated, including series branch, shunt branch, single-pole-single-throw, and single-pole-double-throw. The impacts of different design on RF switch insertion loss and isolation are discussed in detail. The result can be reference as device optimization and circuit design.http://www.chinaaet.com/article/3000097346SOIRF switchscatter parameterILisolation
collection	DOAJ
language	zho
format	Article
sources	DOAJ
author	Xin Haiwei Liu Zhangli
spellingShingle	Xin Haiwei Liu Zhangli Analysis the scatter parameter of SOI RF switch with different design structure Dianzi Jishu Yingyong SOI RF switch scatter parameter IL isolation
author_facet	Xin Haiwei Liu Zhangli
author_sort	Xin Haiwei
title	Analysis the scatter parameter of SOI RF switch with different design structure
title_short	Analysis the scatter parameter of SOI RF switch with different design structure
title_full	Analysis the scatter parameter of SOI RF switch with different design structure
title_fullStr	Analysis the scatter parameter of SOI RF switch with different design structure
title_full_unstemmed	Analysis the scatter parameter of SOI RF switch with different design structure
title_sort	analysis the scatter parameter of soi rf switch with different design structure
publisher	National Computer System Engineering Research Institute of China
series	Dianzi Jishu Yingyong
issn	0258-7998
publishDate	2019-02-01
description	Based on commercial 0.2 μm SOI RF process platform, the influence of stack, width, bias resistance and bias voltage on scatter parameter characteristics of test structure for SOI RF switch application is investigated, including series branch, shunt branch, single-pole-single-throw, and single-pole-double-throw. The impacts of different design on RF switch insertion loss and isolation are discussed in detail. The result can be reference as device optimization and circuit design.
topic	SOI RF switch scatter parameter IL isolation
url	http://www.chinaaet.com/article/3000097346
work_keys_str_mv	AT xinhaiwei analysisthescatterparameterofsoirfswitchwithdifferentdesignstructure AT liuzhangli analysisthescatterparameterofsoirfswitchwithdifferentdesignstructure
_version_	1725998266077675520

Analysis the scatter parameter of SOI RF switch with different design structure

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