Analysis the scatter parameter of SOI RF switch with different design structure

Analysis the scatter parameter of SOI RF switch with different design structure

Based on commercial 0.2 μm SOI RF process platform, the influence of stack, width, bias resistance and bias voltage on scatter parameter characteristics of test structure for SOI RF switch application is investigated, including series branch, shunt branch, single-pole-single-throw, and single-pole-d...

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Bibliographic Details
Main Authors: Xin Haiwei, Liu Zhangli
Format: Article
Language:zho
Published: National Computer System Engineering Research Institute of China 2019-02-01
Series:Dianzi Jishu Yingyong
Subjects:
SOI
RF switch
scatter parameter
IL
isolation
Online Access:http://www.chinaaet.com/article/3000097346
Description
Summary:Based on commercial 0.2 μm SOI RF process platform, the influence of stack, width, bias resistance and bias voltage on scatter parameter characteristics of test structure for SOI RF switch application is investigated, including series branch, shunt branch, single-pole-single-throw, and single-pole-double-throw. The impacts of different design on RF switch insertion loss and isolation are discussed in detail. The result can be reference as device optimization and circuit design.
ISSN:0258-7998

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