Noise Efficient Integrated Amplifier Designs for Biomedical Applications

The recording of neural signals with small monolithically integrated amplifiers is of high interest in research as well as in commercial applications, where it is common to acquire 100 or more channels in parallel. This paper reviews the recent developments in low-noise biomedical amplifier design b...

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Bibliographic Details
Main Authors: Sebastian Simmich, Andreas Bahr, Robert Rieger
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Electronics
Subjects:
NEF
OTA
Online Access:https://www.mdpi.com/2079-9292/10/13/1522
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spelling doaj-d5eb92d926e84d3b8007368a4d1abd142021-07-15T15:32:22ZengMDPI AGElectronics2079-92922021-06-01101522152210.3390/electronics10131522Noise Efficient Integrated Amplifier Designs for Biomedical ApplicationsSebastian Simmich0Andreas Bahr1Robert Rieger2Networked Electronic Systems, Institute of Electrical Engineering and Information Technology, Kiel University, 24143 Kiel, GermanySensor System Electronics, Institute of Electrical Engineering and Information Technology, Kiel University, 24143 Kiel, GermanyNetworked Electronic Systems, Institute of Electrical Engineering and Information Technology, Kiel University, 24143 Kiel, GermanyThe recording of neural signals with small monolithically integrated amplifiers is of high interest in research as well as in commercial applications, where it is common to acquire 100 or more channels in parallel. This paper reviews the recent developments in low-noise biomedical amplifier design based on CMOS technology, including lateral bipolar devices. Seven major circuit topology categories are identified and analyzed on a per-channel basis in terms of their noise-efficiency factor (NEF), input-referred absolute noise, current consumption, and area. A historical trend towards lower NEF is observed whilst absolute noise power and current consumption exhibit a widespread over more than five orders of magnitude. The performance of lateral bipolar transistors as amplifier input devices is examined by transistor-level simulations and measurements from five different prototype designs fabricated in 180 nm and 350 nm CMOS technology. The lowest measured noise floor is 9.9 nV/√Hz with a 10 µA bias current, which results in a NEF of 1.2.https://www.mdpi.com/2079-9292/10/13/1522noise efficiencyNEFlateral BJTchopper stabilizedOTAinverter based
collection DOAJ
language English
format Article
sources DOAJ
author Sebastian Simmich
Andreas Bahr
Robert Rieger
spellingShingle Sebastian Simmich
Andreas Bahr
Robert Rieger
Noise Efficient Integrated Amplifier Designs for Biomedical Applications
Electronics
noise efficiency
NEF
lateral BJT
chopper stabilized
OTA
inverter based
author_facet Sebastian Simmich
Andreas Bahr
Robert Rieger
author_sort Sebastian Simmich
title Noise Efficient Integrated Amplifier Designs for Biomedical Applications
title_short Noise Efficient Integrated Amplifier Designs for Biomedical Applications
title_full Noise Efficient Integrated Amplifier Designs for Biomedical Applications
title_fullStr Noise Efficient Integrated Amplifier Designs for Biomedical Applications
title_full_unstemmed Noise Efficient Integrated Amplifier Designs for Biomedical Applications
title_sort noise efficient integrated amplifier designs for biomedical applications
publisher MDPI AG
series Electronics
issn 2079-9292
publishDate 2021-06-01
description The recording of neural signals with small monolithically integrated amplifiers is of high interest in research as well as in commercial applications, where it is common to acquire 100 or more channels in parallel. This paper reviews the recent developments in low-noise biomedical amplifier design based on CMOS technology, including lateral bipolar devices. Seven major circuit topology categories are identified and analyzed on a per-channel basis in terms of their noise-efficiency factor (NEF), input-referred absolute noise, current consumption, and area. A historical trend towards lower NEF is observed whilst absolute noise power and current consumption exhibit a widespread over more than five orders of magnitude. The performance of lateral bipolar transistors as amplifier input devices is examined by transistor-level simulations and measurements from five different prototype designs fabricated in 180 nm and 350 nm CMOS technology. The lowest measured noise floor is 9.9 nV/√Hz with a 10 µA bias current, which results in a NEF of 1.2.
topic noise efficiency
NEF
lateral BJT
chopper stabilized
OTA
inverter based
url https://www.mdpi.com/2079-9292/10/13/1522
work_keys_str_mv AT sebastiansimmich noiseefficientintegratedamplifierdesignsforbiomedicalapplications
AT andreasbahr noiseefficientintegratedamplifierdesignsforbiomedicalapplications
AT robertrieger noiseefficientintegratedamplifierdesignsforbiomedicalapplications
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