Noise Efficient Integrated Amplifier Designs for Biomedical Applications
The recording of neural signals with small monolithically integrated amplifiers is of high interest in research as well as in commercial applications, where it is common to acquire 100 or more channels in parallel. This paper reviews the recent developments in low-noise biomedical amplifier design b...
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doaj-d5eb92d926e84d3b8007368a4d1abd142021-07-15T15:32:22ZengMDPI AGElectronics2079-92922021-06-01101522152210.3390/electronics10131522Noise Efficient Integrated Amplifier Designs for Biomedical ApplicationsSebastian Simmich0Andreas Bahr1Robert Rieger2Networked Electronic Systems, Institute of Electrical Engineering and Information Technology, Kiel University, 24143 Kiel, GermanySensor System Electronics, Institute of Electrical Engineering and Information Technology, Kiel University, 24143 Kiel, GermanyNetworked Electronic Systems, Institute of Electrical Engineering and Information Technology, Kiel University, 24143 Kiel, GermanyThe recording of neural signals with small monolithically integrated amplifiers is of high interest in research as well as in commercial applications, where it is common to acquire 100 or more channels in parallel. This paper reviews the recent developments in low-noise biomedical amplifier design based on CMOS technology, including lateral bipolar devices. Seven major circuit topology categories are identified and analyzed on a per-channel basis in terms of their noise-efficiency factor (NEF), input-referred absolute noise, current consumption, and area. A historical trend towards lower NEF is observed whilst absolute noise power and current consumption exhibit a widespread over more than five orders of magnitude. The performance of lateral bipolar transistors as amplifier input devices is examined by transistor-level simulations and measurements from five different prototype designs fabricated in 180 nm and 350 nm CMOS technology. The lowest measured noise floor is 9.9 nV/√Hz with a 10 µA bias current, which results in a NEF of 1.2.https://www.mdpi.com/2079-9292/10/13/1522noise efficiencyNEFlateral BJTchopper stabilizedOTAinverter based |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Sebastian Simmich Andreas Bahr Robert Rieger |
spellingShingle |
Sebastian Simmich Andreas Bahr Robert Rieger Noise Efficient Integrated Amplifier Designs for Biomedical Applications Electronics noise efficiency NEF lateral BJT chopper stabilized OTA inverter based |
author_facet |
Sebastian Simmich Andreas Bahr Robert Rieger |
author_sort |
Sebastian Simmich |
title |
Noise Efficient Integrated Amplifier Designs for Biomedical Applications |
title_short |
Noise Efficient Integrated Amplifier Designs for Biomedical Applications |
title_full |
Noise Efficient Integrated Amplifier Designs for Biomedical Applications |
title_fullStr |
Noise Efficient Integrated Amplifier Designs for Biomedical Applications |
title_full_unstemmed |
Noise Efficient Integrated Amplifier Designs for Biomedical Applications |
title_sort |
noise efficient integrated amplifier designs for biomedical applications |
publisher |
MDPI AG |
series |
Electronics |
issn |
2079-9292 |
publishDate |
2021-06-01 |
description |
The recording of neural signals with small monolithically integrated amplifiers is of high interest in research as well as in commercial applications, where it is common to acquire 100 or more channels in parallel. This paper reviews the recent developments in low-noise biomedical amplifier design based on CMOS technology, including lateral bipolar devices. Seven major circuit topology categories are identified and analyzed on a per-channel basis in terms of their noise-efficiency factor (NEF), input-referred absolute noise, current consumption, and area. A historical trend towards lower NEF is observed whilst absolute noise power and current consumption exhibit a widespread over more than five orders of magnitude. The performance of lateral bipolar transistors as amplifier input devices is examined by transistor-level simulations and measurements from five different prototype designs fabricated in 180 nm and 350 nm CMOS technology. The lowest measured noise floor is 9.9 nV/√Hz with a 10 µA bias current, which results in a NEF of 1.2. |
topic |
noise efficiency NEF lateral BJT chopper stabilized OTA inverter based |
url |
https://www.mdpi.com/2079-9292/10/13/1522 |
work_keys_str_mv |
AT sebastiansimmich noiseefficientintegratedamplifierdesignsforbiomedicalapplications AT andreasbahr noiseefficientintegratedamplifierdesignsforbiomedicalapplications AT robertrieger noiseefficientintegratedamplifierdesignsforbiomedicalapplications |
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1721299845170331648 |