Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells

Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells

Screw dislocations in Al-rich AlGaN/AlN quantum wells cause growth spirals with an enhanced Ga incorporation, which create potential minima. Although screw dislocations and their surrounding potential minima suggest non-radiative recombination processes within growth spirals, in reality, screw dislo...

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Main Authors: Mitsuru Funato, Ryan G. Banal, Yoichi Kawakami
Format: Article
Language:English
Published: AIP Publishing LLC 2015-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4935567
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spelling doaj-d5d98263d1cd4d908fe141a7d6b8a7612020-11-24T21:27:46ZengAIP Publishing LLCAIP Advances2158-32262015-11-01511117115117115-610.1063/1.4935567025511ADVScrew dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wellsMitsuru Funato0Ryan G. Banal1Yoichi Kawakami2Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, JapanDepartment of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, JapanDepartment of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, JapanScrew dislocations in Al-rich AlGaN/AlN quantum wells cause growth spirals with an enhanced Ga incorporation, which create potential minima. Although screw dislocations and their surrounding potential minima suggest non-radiative recombination processes within growth spirals, in reality, screw dislocations are not major non-radiative sinks for carriers. Consequently, carriers localized within growth spirals recombine radiatively without being captured by non-radiative recombination centers, resulting in intense emissions from growth spirals.http://dx.doi.org/10.1063/1.4935567
collection DOAJ
language English
format Article
sources DOAJ
author Mitsuru Funato
Ryan G. Banal
Yoichi Kawakami
spellingShingle Mitsuru Funato
Ryan G. Banal
Yoichi Kawakami
Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells
AIP Advances
author_facet Mitsuru Funato
Ryan G. Banal
Yoichi Kawakami
author_sort Mitsuru Funato
title Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells
title_short Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells
title_full Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells
title_fullStr Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells
title_full_unstemmed Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells
title_sort screw dislocation-induced growth spirals as emissive exciton localization centers in al-rich algan/aln quantum wells
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2015-11-01
description Screw dislocations in Al-rich AlGaN/AlN quantum wells cause growth spirals with an enhanced Ga incorporation, which create potential minima. Although screw dislocations and their surrounding potential minima suggest non-radiative recombination processes within growth spirals, in reality, screw dislocations are not major non-radiative sinks for carriers. Consequently, carriers localized within growth spirals recombine radiatively without being captured by non-radiative recombination centers, resulting in intense emissions from growth spirals.
url http://dx.doi.org/10.1063/1.4935567
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AT ryangbanal screwdislocationinducedgrowthspiralsasemissiveexcitonlocalizationcentersinalrichalganalnquantumwells
AT yoichikawakami screwdislocationinducedgrowthspiralsasemissiveexcitonlocalizationcentersinalrichalganalnquantumwells
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