| Summary: | Ceramic materials are high-temperature resistant materials with promising prospects. In some applications, semiconductor devices need to be integrated with a ceramic substrate. Herein, we report on the stable operation of an Al<sub>2</sub>O<sub>3</sub> ceramic-based amorphous-Indium gallium zinc oxide (a-IGZO) thinfilm transistor (TFT) at room temperature up to 523 K. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) were used to characterize the a-IGZO film. A mixed solution was printed on the surface of an insulating layer of alumina. After the combustion reaction, the metal electrode was printed on the surface of a-IGZO to obtain a TFT. The ION/IOFF ratio was 6.04 × 10<sup>6</sup> at 293 K, and it was maintained at 1.44 × 10<sup>5</sup> at 523 K. It was demonstrated that the parameters of a-IGZO TFTs such as the subthreshold swing (SS), <sub>g</sub>m and μ<sub>sat</sub> changed at different temperatures. As such, they can be used as building blocks for integrated circuits that can operate at high temperatures. The fabrication of TFT-based inverters, NAND and NOR gate circuits facilitate the exploration of the possibility of more complex digital circuits that operate at high temperatures, based on hybrid circuit design.
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