A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE

A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE

A quantum well optoelectronic switch (QWOES) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs/InGaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency η(=...

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Main Authors: Ming Rong Lee, K. F. Yarn, W. R. Chang
Format: Article
Language:English
Published: Hindawi Limited 2001-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/APEC.23.231
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spelling doaj-d56f8b47bfe3461c964fb1659e543dc22020-11-25T00:32:17ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50312001-01-0123423123610.1155/APEC.23.231A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBEMing Rong Lee0K. F. Yarn1W. R. Chang2Far East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih, Tainan, Taiwan 744, ChinaFar East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih, Tainan, Taiwan 744, ChinaFar East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih, Tainan, Taiwan 744, ChinaA quantum well optoelectronic switch (QWOES) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs/InGaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency η(= VS/VH) of 6.8 have been obtained when the device is operated in the dark. Typical OFF-and ON-state resistances are 120 kΩ, 25 Ω, respectively. A lasing threshold current density, front slope efficiency and external differential quantum efficiency measured in as-cleaved device are 210 A/cm, 0.4mW/mA and 31.4%, respectively. The peak emission wavelength is centered at about 974 nm.http://dx.doi.org/10.1155/APEC.23.231
collection DOAJ
language English
format Article
sources DOAJ
author Ming Rong Lee
K. F. Yarn
W. R. Chang
spellingShingle Ming Rong Lee
K. F. Yarn
W. R. Chang
A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE
Active and Passive Electronic Components
author_facet Ming Rong Lee
K. F. Yarn
W. R. Chang
author_sort Ming Rong Lee
title A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE
title_short A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE
title_full A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE
title_fullStr A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE
title_full_unstemmed A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE
title_sort new algaas/gaas/ingaas lasing switch grown by mbe
publisher Hindawi Limited
series Active and Passive Electronic Components
issn 0882-7516
1563-5031
publishDate 2001-01-01
description A quantum well optoelectronic switch (QWOES) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs/InGaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency η(= VS/VH) of 6.8 have been obtained when the device is operated in the dark. Typical OFF-and ON-state resistances are 120 kΩ, 25 Ω, respectively. A lasing threshold current density, front slope efficiency and external differential quantum efficiency measured in as-cleaved device are 210 A/cm, 0.4mW/mA and 31.4%, respectively. The peak emission wavelength is centered at about 974 nm.
url http://dx.doi.org/10.1155/APEC.23.231
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