Anisotropic Chemical Etching of III—V Crystals Dissolution Slowness Surface and Application to GaAs
The analytical equation for the dissolution slowness surface of III–V crystals that belong to point group 4¯3 m is derived using a tensorial analysis of the anisotropic chemical dissolution. The role played by orientation functions in the generation of the dissolution slowness extrema is discussed....
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2004-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/08827510310001616858 |