Detecting halfmetallic electronic structures of spintronic materials in a magnetic field
Abstract Band-gap engineering is one of the fundamental techniques in semiconductor technology and also applicable in next generation spintronics using the spin degree of freedom. To fully utilize the spintronic materials, it is essential to optimize the spin-dependent electronic structures in the o...
Main Authors: | H. Fujiwara, R. Y. Umetsu, F. Kuroda, J. Miyawaki, T. Kashiuchi, K. Nishimoto, K. Nagai, A. Sekiyama, A. Irizawa, Y. Takeda, Y. Saitoh, T. Oguchi, Y. Harada, S. Suga |
---|---|
Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2021-09-01
|
Series: | Scientific Reports |
Online Access: | https://doi.org/10.1038/s41598-021-97992-z |
Similar Items
-
New Materials for Spintronics : Electronic structure and magnetism
by: Knut, Ronny
Published: (2012) -
Characterisation of magnetic nanostructures for spintronic applications by electron microscopy
by: Bellini, Eleonora
Published: (2011) -
Theoretical study of electronic structure and magnetism in materials for spintronics
by: Ibrahim, Fatima
Published: (2014) -
Effect of external magnetic field on locking range of spintronic feedback nano oscillator
by: Hanuman Singh, et al.
Published: (2018-05-01) -
Spintronic materials and devices based on antiferromagnetic metals
by: Y.Y. Wang, et al.
Published: (2017-04-01)