Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field‐Effect Transistors
Abstract Over the past three decades, the mobility of organic field‐effect transistors (OFETs) has been improved from 10−5 up to over 10 cm2 V−1 s−1, which reaches or has already satisfied the requirements of demanding applications. However, pronounced nonideal behaviors in current–voltage character...
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.201900375 |
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doaj-d4955bf7756e45d293cce5a7f3392d742020-11-25T02:01:11ZengWileyAdvanced Science2198-38442019-10-01620n/an/a10.1002/advs.201900375Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field‐Effect TransistorsHio‐Ieng Un0Jie‐Yu Wang1Jian Pei2Beijing National Laboratory for Molecular Sciences (BNLMS) Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education Key Laboratory of Polymer Chemistry and Physics of Ministry of Education Center of Soft Matter Science and Engineering College of Chemistry and Molecular Engineering Peking University Beijing 100871 ChinaBeijing National Laboratory for Molecular Sciences (BNLMS) Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education Key Laboratory of Polymer Chemistry and Physics of Ministry of Education Center of Soft Matter Science and Engineering College of Chemistry and Molecular Engineering Peking University Beijing 100871 ChinaBeijing National Laboratory for Molecular Sciences (BNLMS) Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education Key Laboratory of Polymer Chemistry and Physics of Ministry of Education Center of Soft Matter Science and Engineering College of Chemistry and Molecular Engineering Peking University Beijing 100871 ChinaAbstract Over the past three decades, the mobility of organic field‐effect transistors (OFETs) has been improved from 10−5 up to over 10 cm2 V−1 s−1, which reaches or has already satisfied the requirements of demanding applications. However, pronounced nonideal behaviors in current–voltage characteristics are commonly observed, which indicates that the reported mobilities may not truly reflect the device properties. Herein, a comprehensive understanding of the origins of several observed nonidealities (downward, upward, double‐slope, superlinear, and humped transfer characteristics) is summarized, and how to extract comparatively reliable mobilities from nonideal behaviors in OFETs is discussed. Combining an overview of the ideal and state‐of‐the‐art OFETs, considerable possible approaches are also provided for future OFETs.https://doi.org/10.1002/advs.201900375current–voltage characteristicsgate voltage‐dependent mobilitynonideal behaviorsorganic field‐effect transistors |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Hio‐Ieng Un Jie‐Yu Wang Jian Pei |
| spellingShingle |
Hio‐Ieng Un Jie‐Yu Wang Jian Pei Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field‐Effect Transistors Advanced Science current–voltage characteristics gate voltage‐dependent mobility nonideal behaviors organic field‐effect transistors |
| author_facet |
Hio‐Ieng Un Jie‐Yu Wang Jian Pei |
| author_sort |
Hio‐Ieng Un |
| title |
Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field‐Effect Transistors |
| title_short |
Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field‐Effect Transistors |
| title_full |
Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field‐Effect Transistors |
| title_fullStr |
Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field‐Effect Transistors |
| title_full_unstemmed |
Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field‐Effect Transistors |
| title_sort |
recent efforts in understanding and improving the nonideal behaviors of organic field‐effect transistors |
| publisher |
Wiley |
| series |
Advanced Science |
| issn |
2198-3844 |
| publishDate |
2019-10-01 |
| description |
Abstract Over the past three decades, the mobility of organic field‐effect transistors (OFETs) has been improved from 10−5 up to over 10 cm2 V−1 s−1, which reaches or has already satisfied the requirements of demanding applications. However, pronounced nonideal behaviors in current–voltage characteristics are commonly observed, which indicates that the reported mobilities may not truly reflect the device properties. Herein, a comprehensive understanding of the origins of several observed nonidealities (downward, upward, double‐slope, superlinear, and humped transfer characteristics) is summarized, and how to extract comparatively reliable mobilities from nonideal behaviors in OFETs is discussed. Combining an overview of the ideal and state‐of‐the‐art OFETs, considerable possible approaches are also provided for future OFETs. |
| topic |
current–voltage characteristics gate voltage‐dependent mobility nonideal behaviors organic field‐effect transistors |
| url |
https://doi.org/10.1002/advs.201900375 |
| work_keys_str_mv |
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