Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ
We propose a novel route for optimizing the thermoelectric power of a polaronic conductor, independent of its electronic conductivity. This mechanism is exemplified here in thin-films of La2NiO4+δ. Tensile stress induced by epitaxial growth on SrTiO3 doubles the thermoelectric power of ≈15 nm thick...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-08-01
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| Series: | APL Materials |
| Online Access: | http://link.aip.org/link/doi/10.1063/1.4818356 |
| Summary: | We propose a novel route for optimizing the thermoelectric power of a polaronic conductor, independent of its electronic conductivity. This mechanism is exemplified here in thin-films of La2NiO4+δ. Tensile stress induced by epitaxial growth on SrTiO3 doubles the thermoelectric power of ≈15 nm thick films relative to ≈90 nm films, while the electronic conductivity remains practically unchanged. Epitaxial strain influences the statistical contribution to the high temperature thermopower, but introduces a smaller correction to the electronic conductivity. This mechanism provides a new way for optimizing the high temperature thermoelectric performance of polaronic conductors. |
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| ISSN: | 2166-532X |