Electric-field control of ferromagnetism through oxygen ion gating
It has been suggested that the magnetic properties of metal layers using reversible redox reactions could form the basis of memory devices but this requires fast electric control to be practical. Here the authors demonstrate this on sub-millisecond timescales in a metal–oxide heterostructure.
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| Format: | Article |
| Language: | English |
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Nature Publishing Group
2017-12-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-017-02359-6 |
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doaj-d452efc12aaf494e82e9ff231e8b94db2021-05-11T07:21:34ZengNature Publishing GroupNature Communications2041-17232017-12-01811710.1038/s41467-017-02359-6Electric-field control of ferromagnetism through oxygen ion gatingHao-Bo Li0Nianpeng Lu1Qinghua Zhang2Yujia Wang3Deqiang Feng4Tianzhe Chen5Shuzhen Yang6Zheng Duan7Zhuolu Li8Yujun Shi9Weichao Wang10Wei-Hua Wang11Kui Jin12Hui Liu13Jing Ma14Lin Gu15Cewen Nan16Pu Yu17State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua UniversityState Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua UniversityInstitute of Physics, Chinese Academy of ScienceState Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua UniversityDepartment of Electronic Science and Engineering, Nankai UniversityState Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua UniversityState Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua UniversityState Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua UniversityState Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua UniversityInstitute of Physics, Chinese Academy of ScienceDepartment of Electronic Science and Engineering, Nankai UniversityDepartment of Electronic Science and Engineering, Nankai UniversityInstitute of Physics, Chinese Academy of ScienceDepartment of Electronic Science and Engineering, Nankai UniversityState Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua UniversityInstitute of Physics, Chinese Academy of ScienceState Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua UniversityState Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua UniversityIt has been suggested that the magnetic properties of metal layers using reversible redox reactions could form the basis of memory devices but this requires fast electric control to be practical. Here the authors demonstrate this on sub-millisecond timescales in a metal–oxide heterostructure.https://doi.org/10.1038/s41467-017-02359-6 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Hao-Bo Li Nianpeng Lu Qinghua Zhang Yujia Wang Deqiang Feng Tianzhe Chen Shuzhen Yang Zheng Duan Zhuolu Li Yujun Shi Weichao Wang Wei-Hua Wang Kui Jin Hui Liu Jing Ma Lin Gu Cewen Nan Pu Yu |
| spellingShingle |
Hao-Bo Li Nianpeng Lu Qinghua Zhang Yujia Wang Deqiang Feng Tianzhe Chen Shuzhen Yang Zheng Duan Zhuolu Li Yujun Shi Weichao Wang Wei-Hua Wang Kui Jin Hui Liu Jing Ma Lin Gu Cewen Nan Pu Yu Electric-field control of ferromagnetism through oxygen ion gating Nature Communications |
| author_facet |
Hao-Bo Li Nianpeng Lu Qinghua Zhang Yujia Wang Deqiang Feng Tianzhe Chen Shuzhen Yang Zheng Duan Zhuolu Li Yujun Shi Weichao Wang Wei-Hua Wang Kui Jin Hui Liu Jing Ma Lin Gu Cewen Nan Pu Yu |
| author_sort |
Hao-Bo Li |
| title |
Electric-field control of ferromagnetism through oxygen ion gating |
| title_short |
Electric-field control of ferromagnetism through oxygen ion gating |
| title_full |
Electric-field control of ferromagnetism through oxygen ion gating |
| title_fullStr |
Electric-field control of ferromagnetism through oxygen ion gating |
| title_full_unstemmed |
Electric-field control of ferromagnetism through oxygen ion gating |
| title_sort |
electric-field control of ferromagnetism through oxygen ion gating |
| publisher |
Nature Publishing Group |
| series |
Nature Communications |
| issn |
2041-1723 |
| publishDate |
2017-12-01 |
| description |
It has been suggested that the magnetic properties of metal layers using reversible redox reactions could form the basis of memory devices but this requires fast electric control to be practical. Here the authors demonstrate this on sub-millisecond timescales in a metal–oxide heterostructure. |
| url |
https://doi.org/10.1038/s41467-017-02359-6 |
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