Electric-field control of ferromagnetism through oxygen ion gating

Electric-field control of ferromagnetism through oxygen ion gating

It has been suggested that the magnetic properties of metal layers using reversible redox reactions could form the basis of memory devices but this requires fast electric control to be practical. Here the authors demonstrate this on sub-millisecond timescales in a metal–oxide heterostructure.

Bibliographic Details
Main Authors: Hao-Bo Li, Nianpeng Lu, Qinghua Zhang, Yujia Wang, Deqiang Feng, Tianzhe Chen, Shuzhen Yang, Zheng Duan, Zhuolu Li, Yujun Shi, Weichao Wang, Wei-Hua Wang, Kui Jin, Hui Liu, Jing Ma, Lin Gu, Cewen Nan, Pu Yu
Format: Article
Language:English
Published: Nature Publishing Group 2017-12-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-017-02359-6

Internet

https://doi.org/10.1038/s41467-017-02359-6

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