Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition
In this work, we have successfully grown high quality epitaxial β-Ga2O3 thin films on β-Ga2O3 (100) and Al2O3(0001) substrates using pulsed laser deposition (PLD). By optimizing temperature and oxygen pressure, the best conditions were found to be 650–700∘C and 0.5Pa. To further improve the quality...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
World Scientific Publishing
2019-08-01
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| Series: | Journal of Advanced Dielectrics |
| Subjects: | |
| Online Access: | http://www.worldscientific.com/doi/pdf/10.1142/S2010135X19500322 |