Analysis of Cavity PD Characteristics’ Sensitivity to Changes in the Supply Voltage Frequency

The supply voltage frequency effect on partial discharge (PD) phenomena has continued to draw research interest. Although most high voltage equipment operates at power frequency (50/60 Hz), testing is often done at different frequencies for various reasons. Despite some agreements and inconsistencie...

Full description

Bibliographic Details
Main Authors: Tapiwa Venge, Cuthbert Nyamupangedengu
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Energies
Subjects:
Online Access:https://www.mdpi.com/1996-1073/14/2/478
Description
Summary:The supply voltage frequency effect on partial discharge (PD) phenomena has continued to draw research interest. Although most high voltage equipment operates at power frequency (50/60 Hz), testing is often done at different frequencies for various reasons. Despite some agreements and inconsistencies for the research findings of PD activity’s frequency dependence, there has been consensus on the recognition of the discharge mechanism parameters that influence how the supply voltage frequency affects PD activity. These parameters include statistical time lag, discharge area surface conductivity, and the residual charge decay. In this paper, a 3-capacitor model (ABC) is used to simulate how the changes in the discharge mechanism parameters influence PD characteristics as a function of the supply voltage frequency. The findings are that the phase-resolved partial discharge pattern (PRPDP) and PD repetition rate (PDRR) characteristics are more sensitive to variations in the probability of the seed electron availability at higher frequencies of the supply voltage. The opposite trend is observed for the cavity surface resistance. At lower resistance of cavity surface, the PRPDP and PDRR characteristics are more sensitive to changes in the supply voltage frequency than at higher resistances. The paper also confirms that incorporating equivalent resistances in the ABC model makes it more authentic than the model comprising of capacitors only.
ISSN:1996-1073