Mathematical aspects of hydrodynamic models for semiconductors device simulation

Mathematical aspects of hydrodynamic models for semiconductors device simulation

<span style="font-family: DejaVu Sans,sans-serif;">Two thermodynamic models of semiconductor device are considered. The first one takes into account thermal and collisional effects, while neglecting viscous terms, which are included in the second. A qualitative analysis of stationary...

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Bibliographic Details
Main Authors: Armando Majorana, Giovanni Russo
Format: Article
Language:English
Published: Università degli Studi di Catania 1991-05-01
Series:Le Matematiche
Online Access:http://www.dmi.unict.it/ojs/index.php/lematematiche/article/view/617
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spelling doaj-d36d736d5719463686d1c1432c979b072020-11-25T03:20:44ZengUniversità degli Studi di CataniaLe Matematiche0373-35052037-52981991-05-01461235246584Mathematical aspects of hydrodynamic models for semiconductors device simulationArmando MajoranaGiovanni Russo<span style="font-family: DejaVu Sans,sans-serif;">Two thermodynamic models of semiconductor device are considered. The first one takes into account thermal and collisional effects, while neglecting viscous terms, which are included in the second. A qualitative analysis of stationary one-dimensional solutions is performed and some numerical results are presented.</span>http://www.dmi.unict.it/ojs/index.php/lematematiche/article/view/617
collection DOAJ
language English
format Article
sources DOAJ
author Armando Majorana
Giovanni Russo
spellingShingle Armando Majorana
Giovanni Russo
Mathematical aspects of hydrodynamic models for semiconductors device simulation
Le Matematiche
author_facet Armando Majorana
Giovanni Russo
author_sort Armando Majorana
title Mathematical aspects of hydrodynamic models for semiconductors device simulation
title_short Mathematical aspects of hydrodynamic models for semiconductors device simulation
title_full Mathematical aspects of hydrodynamic models for semiconductors device simulation
title_fullStr Mathematical aspects of hydrodynamic models for semiconductors device simulation
title_full_unstemmed Mathematical aspects of hydrodynamic models for semiconductors device simulation
title_sort mathematical aspects of hydrodynamic models for semiconductors device simulation
publisher Università degli Studi di Catania
series Le Matematiche
issn 0373-3505
2037-5298
publishDate 1991-05-01
description <span style="font-family: DejaVu Sans,sans-serif;">Two thermodynamic models of semiconductor device are considered. The first one takes into account thermal and collisional effects, while neglecting viscous terms, which are included in the second. A qualitative analysis of stationary one-dimensional solutions is performed and some numerical results are presented.</span>
url http://www.dmi.unict.it/ojs/index.php/lematematiche/article/view/617
work_keys_str_mv AT armandomajorana mathematicalaspectsofhydrodynamicmodelsforsemiconductorsdevicesimulation
AT giovannirusso mathematicalaspectsofhydrodynamicmodelsforsemiconductorsdevicesimulation
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