Mathematical aspects of hydrodynamic models for semiconductors device simulation
<span style="font-family: DejaVu Sans,sans-serif;">Two thermodynamic models of semiconductor device are considered. The first one takes into account thermal and collisional effects, while neglecting viscous terms, which are included in the second. A qualitative analysis of stationary...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Università degli Studi di Catania
1991-05-01
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| Series: | Le Matematiche |
| Online Access: | http://www.dmi.unict.it/ojs/index.php/lematematiche/article/view/617 |
| Summary: | <span style="font-family: DejaVu Sans,sans-serif;">Two thermodynamic models of semiconductor device are considered. The first one takes into account thermal and collisional effects, while neglecting viscous terms, which are included in the second. A qualitative analysis of stationary one-dimensional solutions is performed and some numerical results are presented.</span> |
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| ISSN: | 0373-3505 2037-5298 |