Spin pumping driven auto-oscillator for phase-encoded logic—device design and material requirements
In this work, we propose a spin nano-oscillator (SNO) device where information is encoded in the phase (time-shift) of the output oscillations. The spin current required to set up the oscillations in the device is generated through spin pumping from an input nanomagnet that is precessing at RF frequ...
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doaj-d2d510c04714463a8f9d554b2ed0e1582020-11-24T22:53:30ZengAIP Publishing LLCAIP Advances2158-32262017-05-0175055905055905-610.1063/1.4973390043791ADVSpin pumping driven auto-oscillator for phase-encoded logic—device design and material requirementsS. Rakheja0N. Kani1Electrical and Computer Engineering, New York University, Brooklyn, New York 11201, USAElectrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30318, USAIn this work, we propose a spin nano-oscillator (SNO) device where information is encoded in the phase (time-shift) of the output oscillations. The spin current required to set up the oscillations in the device is generated through spin pumping from an input nanomagnet that is precessing at RF frequencies. We discuss the operation of the SNO device, in which either the in-plane (IP) or out-of-plane (OOP) magnetization oscillations are utilized toward implementing ultra-low-power circuits. Using physical models of the nanomagnet dynamics and the spin transport through non-magnetic channels, we quantify the reliability of the SNO device using a “scaling ratio”. Material requirements for the nanomagnet and the channel to ensure correct logic functionality are identified using the scaling ratio metric. SNO devices consume (2-5)× lower energy compared to CMOS devices and other spin-based devices with similar device sizes and material parameters. The analytical models presented in this work can be used to optimize the performance and scaling of SNO devices in comparison to CMOS devices at ultra-scaled technology nodes.http://dx.doi.org/10.1063/1.4973390 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
S. Rakheja N. Kani |
spellingShingle |
S. Rakheja N. Kani Spin pumping driven auto-oscillator for phase-encoded logic—device design and material requirements AIP Advances |
author_facet |
S. Rakheja N. Kani |
author_sort |
S. Rakheja |
title |
Spin pumping driven auto-oscillator for phase-encoded logic—device design and material requirements |
title_short |
Spin pumping driven auto-oscillator for phase-encoded logic—device design and material requirements |
title_full |
Spin pumping driven auto-oscillator for phase-encoded logic—device design and material requirements |
title_fullStr |
Spin pumping driven auto-oscillator for phase-encoded logic—device design and material requirements |
title_full_unstemmed |
Spin pumping driven auto-oscillator for phase-encoded logic—device design and material requirements |
title_sort |
spin pumping driven auto-oscillator for phase-encoded logic—device design and material requirements |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2017-05-01 |
description |
In this work, we propose a spin nano-oscillator (SNO) device where information is encoded in the phase (time-shift) of the output oscillations. The spin current required to set up the oscillations in the device is generated through spin pumping from an input nanomagnet that is precessing at RF frequencies. We discuss the operation of the SNO device, in which either the in-plane (IP) or out-of-plane (OOP) magnetization oscillations are utilized toward implementing ultra-low-power circuits. Using physical models of the nanomagnet dynamics and the spin transport through non-magnetic channels, we quantify the reliability of the SNO device using a “scaling ratio”. Material requirements for the nanomagnet and the channel to ensure correct logic functionality are identified using the scaling ratio metric. SNO devices consume (2-5)× lower energy compared to CMOS devices and other spin-based devices with similar device sizes and material parameters. The analytical models presented in this work can be used to optimize the performance and scaling of SNO devices in comparison to CMOS devices at ultra-scaled technology nodes. |
url |
http://dx.doi.org/10.1063/1.4973390 |
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