Sputtered single-phase kesterite Cu2ZnSnS4 (CZTS) thin film for photovoltaic applications: Post annealing parameter optimization and property analysis
A potential solar absorber material, sputtered kesterite Cu2ZnSnS4 (CZTS) thin film, has been extensively studied in recent years due to its advantageous properties, including the earth abundance of its constituent elements, nontoxicity, suitable band gap, and high absorption coefficient. 2000 nm CZ...
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doaj-d211fa536c20405cac7728fe5828c4972020-11-24T23:29:22ZengAIP Publishing LLCAIP Advances2158-32262020-01-01101015230015230-1010.1063/1.5129202Sputtered single-phase kesterite Cu2ZnSnS4 (CZTS) thin film for photovoltaic applications: Post annealing parameter optimization and property analysisAfrina Sharmin0M. S. Bashar1Munira Sultana2S. M. Mostafa Al Mamun3Institute of Fuel Research and Development (IFRD), Bangladesh Council of Scientific and Industrial Research (BCSIR), Dhaka 1205, BangladeshInstitute of Fuel Research and Development (IFRD), Bangladesh Council of Scientific and Industrial Research (BCSIR), Dhaka 1205, BangladeshInstitute of Fuel Research and Development (IFRD), Bangladesh Council of Scientific and Industrial Research (BCSIR), Dhaka 1205, BangladeshDepartment of Electrical and Electronic Engineering (EEE), University of Dhaka, Dhaka 1000, BangladeshA potential solar absorber material, sputtered kesterite Cu2ZnSnS4 (CZTS) thin film, has been extensively studied in recent years due to its advantageous properties, including the earth abundance of its constituent elements, nontoxicity, suitable band gap, and high absorption coefficient. 2000 nm CZTS thin films were deposited on soda lime glass by a sputtering technique. The prepared films underwent a postannealing treatment for crystallization in which different temperatures and pressures were applied to understand its impact on film growth, phase formation, and stoichiometry. The annealed samples were subsequently characterized by Raman and UV-visible (UV-Vis) spectroscopy, energy-dispersive X-ray spectroscopy (EDX), X-ray powder diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The thickness of each film was measured using a surface profilometer and from a cross-sectional image obtained by SEM. The XRD pattern for each film showed characteristic (112), (220), and (312) peaks, and the phase purity was confirmed via Raman studies. Film surface morphology and roughness were studied by AFM. The root mean square roughness was found to increase with annealing temperature and base pressure. The chemical compositions of the prepared samples were analyzed by EDX, and the films showed desired stoichiometry. UV-Vis absorption spectroscopy indicated that the direct band gap energies (Eg) of the films were 1.47 eV–1.51 eV, within the optimum range for use in solar cells. These attractive properties of the sputtered CZTS thin film should heighten interest in its use as a solar absorber layer in the next-generation photovoltaic cells, suggesting that it possesses substantial commercial promise.http://dx.doi.org/10.1063/1.5129202 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Afrina Sharmin M. S. Bashar Munira Sultana S. M. Mostafa Al Mamun |
spellingShingle |
Afrina Sharmin M. S. Bashar Munira Sultana S. M. Mostafa Al Mamun Sputtered single-phase kesterite Cu2ZnSnS4 (CZTS) thin film for photovoltaic applications: Post annealing parameter optimization and property analysis AIP Advances |
author_facet |
Afrina Sharmin M. S. Bashar Munira Sultana S. M. Mostafa Al Mamun |
author_sort |
Afrina Sharmin |
title |
Sputtered single-phase kesterite Cu2ZnSnS4 (CZTS) thin film for photovoltaic applications: Post annealing parameter optimization and property analysis |
title_short |
Sputtered single-phase kesterite Cu2ZnSnS4 (CZTS) thin film for photovoltaic applications: Post annealing parameter optimization and property analysis |
title_full |
Sputtered single-phase kesterite Cu2ZnSnS4 (CZTS) thin film for photovoltaic applications: Post annealing parameter optimization and property analysis |
title_fullStr |
Sputtered single-phase kesterite Cu2ZnSnS4 (CZTS) thin film for photovoltaic applications: Post annealing parameter optimization and property analysis |
title_full_unstemmed |
Sputtered single-phase kesterite Cu2ZnSnS4 (CZTS) thin film for photovoltaic applications: Post annealing parameter optimization and property analysis |
title_sort |
sputtered single-phase kesterite cu2znsns4 (czts) thin film for photovoltaic applications: post annealing parameter optimization and property analysis |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2020-01-01 |
description |
A potential solar absorber material, sputtered kesterite Cu2ZnSnS4 (CZTS) thin film, has been extensively studied in recent years due to its advantageous properties, including the earth abundance of its constituent elements, nontoxicity, suitable band gap, and high absorption coefficient. 2000 nm CZTS thin films were deposited on soda lime glass by a sputtering technique. The prepared films underwent a postannealing treatment for crystallization in which different temperatures and pressures were applied to understand its impact on film growth, phase formation, and stoichiometry. The annealed samples were subsequently characterized by Raman and UV-visible (UV-Vis) spectroscopy, energy-dispersive X-ray spectroscopy (EDX), X-ray powder diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The thickness of each film was measured using a surface profilometer and from a cross-sectional image obtained by SEM. The XRD pattern for each film showed characteristic (112), (220), and (312) peaks, and the phase purity was confirmed via Raman studies. Film surface morphology and roughness were studied by AFM. The root mean square roughness was found to increase with annealing temperature and base pressure. The chemical compositions of the prepared samples were analyzed by EDX, and the films showed desired stoichiometry. UV-Vis absorption spectroscopy indicated that the direct band gap energies (Eg) of the films were 1.47 eV–1.51 eV, within the optimum range for use in solar cells. These attractive properties of the sputtered CZTS thin film should heighten interest in its use as a solar absorber layer in the next-generation photovoltaic cells, suggesting that it possesses substantial commercial promise. |
url |
http://dx.doi.org/10.1063/1.5129202 |
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