Electrical properties of InSb p-n junctions prepared by diffusion methods

Electrical properties of InSb p-n junctions prepared by diffusion methods

InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have...

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Bibliographic Details
Main Author: A.V. Sukach
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2016-10-01
Series:Semiconductor Physics, Quantum Electronics & Optoelectronics
Subjects:
insb
photodiode
two-stage diffusion
annealing
Online Access:http://journal-spqeo.org.ua/n3_2016/P295-298abstr.html
id doaj-d1a958f6c75b4c5d92c333eb300b2cf4
record_format Article
spelling doaj-d1a958f6c75b4c5d92c333eb300b2cf42020-11-25T02:34:56ZengNational Academy of Sciences of Ukraine. Institute of Semi conductor physics. Semiconductor Physics, Quantum Electronics & Optoelectronics 1560-80341605-65822016-10-0119329529810.15407/spqeo19.03.295 Electrical properties of InSb p-n junctions prepared by diffusion methods A.V. Sukach01V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have been obtained for the junctions prepared using the two-stage diffusion process. http://journal-spqeo.org.ua/n3_2016/P295-298abstr.htmlinsbphotodiodetwo-stage diffusionannealing
collection DOAJ
language English
format Article
sources DOAJ
author A.V. Sukach
spellingShingle A.V. Sukach
Electrical properties of InSb p-n junctions prepared by diffusion methods
Semiconductor Physics, Quantum Electronics & Optoelectronics
insb
photodiode
two-stage diffusion
annealing
author_facet A.V. Sukach
author_sort A.V. Sukach
title Electrical properties of InSb p-n junctions prepared by diffusion methods
title_short Electrical properties of InSb p-n junctions prepared by diffusion methods
title_full Electrical properties of InSb p-n junctions prepared by diffusion methods
title_fullStr Electrical properties of InSb p-n junctions prepared by diffusion methods
title_full_unstemmed Electrical properties of InSb p-n junctions prepared by diffusion methods
title_sort electrical properties of insb p-n junctions prepared by diffusion methods
publisher National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
series Semiconductor Physics, Quantum Electronics & Optoelectronics
issn 1560-8034
1605-6582
publishDate 2016-10-01
description InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have been obtained for the junctions prepared using the two-stage diffusion process.
topic insb
photodiode
two-stage diffusion
annealing
url http://journal-spqeo.org.ua/n3_2016/P295-298abstr.html
work_keys_str_mv AT avsukach electricalpropertiesofinsbpnjunctionspreparedbydiffusionmethods
_version_ 1724806432350535680

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