Analysis and Optimization of Power MOSFETs Shaped Switching Transients for Reduced EMI Generation
The abrupt change in current or voltage caused by the rapid switching action of power semiconductor devices will generate high-frequency electromagnetic interference (EMI) and needs to be located as the primary interference sources in power electronics. This paper deals with interference suppression...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8055554/ |