Deposition kinetics of in-situ oxygen doped polysilicon film

Deposition kinetics of in-situ oxygen doped polysilicon film

The influence of deposition conditions on composition of in-situ oxygen doped polysilicon films has been investigated. A kinetic model of adsorption-deposition process using concentrated silane and nitrous oxide has been developed. The range of optimal ratios of silane and nitrous oxide flows and de...

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Bibliographic Details
Main Authors: Nalivaiko O. Yu., Turtsevich A. S.
Format: Article
Language:English
Published: Politehperiodika 2012-04-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
polysilicon
adsorptive-kinetic model
film deposition
Online Access:http://www.tkea.com.ua/tkea/2012/2_2012/pdf/08.zip
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spelling doaj-d10d84628e394b688dcf483e8b9637432020-11-24T21:13:38ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182012-04-0123741Deposition kinetics of in-situ oxygen doped polysilicon filmNalivaiko O. Yu.Turtsevich A. S.The influence of deposition conditions on composition of in-situ oxygen doped polysilicon films has been investigated. A kinetic model of adsorption-deposition process using concentrated silane and nitrous oxide has been developed. The range of optimal ratios of silane and nitrous oxide flows and deposition temperature, which provide the acceptable deposition rate, thickness uniformity, controllability of oxygen content in films and conformal deposition, have been determined.http://www.tkea.com.ua/tkea/2012/2_2012/pdf/08.zippolysiliconadsorptive-kinetic modelfilm deposition
collection DOAJ
language English
format Article
sources DOAJ
author Nalivaiko O. Yu.
Turtsevich A. S.
spellingShingle Nalivaiko O. Yu.
Turtsevich A. S.
Deposition kinetics of in-situ oxygen doped polysilicon film
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
polysilicon
adsorptive-kinetic model
film deposition
author_facet Nalivaiko O. Yu.
Turtsevich A. S.
author_sort Nalivaiko O. Yu.
title Deposition kinetics of in-situ oxygen doped polysilicon film
title_short Deposition kinetics of in-situ oxygen doped polysilicon film
title_full Deposition kinetics of in-situ oxygen doped polysilicon film
title_fullStr Deposition kinetics of in-situ oxygen doped polysilicon film
title_full_unstemmed Deposition kinetics of in-situ oxygen doped polysilicon film
title_sort deposition kinetics of in-situ oxygen doped polysilicon film
publisher Politehperiodika
series Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
issn 2225-5818
publishDate 2012-04-01
description The influence of deposition conditions on composition of in-situ oxygen doped polysilicon films has been investigated. A kinetic model of adsorption-deposition process using concentrated silane and nitrous oxide has been developed. The range of optimal ratios of silane and nitrous oxide flows and deposition temperature, which provide the acceptable deposition rate, thickness uniformity, controllability of oxygen content in films and conformal deposition, have been determined.
topic polysilicon
adsorptive-kinetic model
film deposition
url http://www.tkea.com.ua/tkea/2012/2_2012/pdf/08.zip
work_keys_str_mv AT nalivaikooyu depositionkineticsofinsituoxygendopedpolysiliconfilm
AT turtsevichas depositionkineticsofinsituoxygendopedpolysiliconfilm
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