Impact of Channel Thickness Variation on Bandstructure and Source-to-Drain Tunneling in Ultra-Thin Body III-V MOSFETs

Impact of Channel Thickness Variation on Bandstructure and Source-to-Drain Tunneling in Ultra-Thin Body III-V MOSFETs

In nanoscale MOSFETs with sub-10 nm channels, the source-to-drain tunneling is expected to be a critical bottleneck, especially in III-V devices on account of their extremely low effective masses. Also, to maintain electrostatic integrity at extremely small gate lengths, the channels need to be made...

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Bibliographic Details
Main Authors: Tapas Dutta, Sanjay Kumar, Priyank Rastogi, Amit Agarwal, Yogesh Singh Chauhan
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
source-to-drain tunneling
quantum confinement
effective mass
Online Access:https://ieeexplore.ieee.org/document/7394100/

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