All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric Detection
Abstract This work developed an all-Si photodetector with a surface plasmonic resonator formed by a sub-wavelength Au grating on the top of a Si-nanowire array and the same one beside the wires. The Au/Si interface with a Schottky barrier allows the photo-electron detection in near-infrared waveleng...
Main Authors: | , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
SpringerOpen
2019-01-01
|
Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-019-2868-3 |
id |
doaj-d020115dec5a46eeb011e6ca521332da |
---|---|
record_format |
Article |
spelling |
doaj-d020115dec5a46eeb011e6ca521332da2020-11-25T02:17:06ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-01-011411910.1186/s11671-019-2868-3All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric DetectionBo Feng0Jingyuan Zhu1Chen Xu2Jing Wan3Zelong Gan4Bingrui Lu5Yifang Chen6Fudan UniversityFudan UniversityFudan UniversityFudan UniversityJiHua LaboratoryFudan UniversityNanolithography and Application Research Group, State Key Lab of Asic and System, Fudan UniversityAbstract This work developed an all-Si photodetector with a surface plasmonic resonator formed by a sub-wavelength Au grating on the top of a Si-nanowire array and the same one beside the wires. The Au/Si interface with a Schottky barrier allows the photo-electron detection in near-infrared wavelength based on the internal emission of hot electrons generated by the surface plasmons in the cavity. Meanwhile, the Au sub-wavelength grating on the Si nanowire array acts as a polarizer for polarimetric detection. Finite-difference time-domain method was applied in the design of the novel device and state-of-art nanofabrication based on electron beam lithography was carried out. The characterization of the photo-electronic properties as well as the polarimetric detection demonstrate that the fabricated detectors on the silicon substrate possesses great prospects for sensing technology on all-Si.http://link.springer.com/article/10.1186/s11671-019-2868-3All-Si photodetectorInternal emission of hot electronsSurface plasmonic resonatorPolarimetric detectionNanofabrication |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Bo Feng Jingyuan Zhu Chen Xu Jing Wan Zelong Gan Bingrui Lu Yifang Chen |
spellingShingle |
Bo Feng Jingyuan Zhu Chen Xu Jing Wan Zelong Gan Bingrui Lu Yifang Chen All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric Detection Nanoscale Research Letters All-Si photodetector Internal emission of hot electrons Surface plasmonic resonator Polarimetric detection Nanofabrication |
author_facet |
Bo Feng Jingyuan Zhu Chen Xu Jing Wan Zelong Gan Bingrui Lu Yifang Chen |
author_sort |
Bo Feng |
title |
All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric Detection |
title_short |
All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric Detection |
title_full |
All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric Detection |
title_fullStr |
All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric Detection |
title_full_unstemmed |
All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric Detection |
title_sort |
all-si photodetectors with a resonant cavity for near-infrared polarimetric detection |
publisher |
SpringerOpen |
series |
Nanoscale Research Letters |
issn |
1931-7573 1556-276X |
publishDate |
2019-01-01 |
description |
Abstract This work developed an all-Si photodetector with a surface plasmonic resonator formed by a sub-wavelength Au grating on the top of a Si-nanowire array and the same one beside the wires. The Au/Si interface with a Schottky barrier allows the photo-electron detection in near-infrared wavelength based on the internal emission of hot electrons generated by the surface plasmons in the cavity. Meanwhile, the Au sub-wavelength grating on the Si nanowire array acts as a polarizer for polarimetric detection. Finite-difference time-domain method was applied in the design of the novel device and state-of-art nanofabrication based on electron beam lithography was carried out. The characterization of the photo-electronic properties as well as the polarimetric detection demonstrate that the fabricated detectors on the silicon substrate possesses great prospects for sensing technology on all-Si. |
topic |
All-Si photodetector Internal emission of hot electrons Surface plasmonic resonator Polarimetric detection Nanofabrication |
url |
http://link.springer.com/article/10.1186/s11671-019-2868-3 |
work_keys_str_mv |
AT bofeng allsiphotodetectorswitharesonantcavityfornearinfraredpolarimetricdetection AT jingyuanzhu allsiphotodetectorswitharesonantcavityfornearinfraredpolarimetricdetection AT chenxu allsiphotodetectorswitharesonantcavityfornearinfraredpolarimetricdetection AT jingwan allsiphotodetectorswitharesonantcavityfornearinfraredpolarimetricdetection AT zelonggan allsiphotodetectorswitharesonantcavityfornearinfraredpolarimetricdetection AT bingruilu allsiphotodetectorswitharesonantcavityfornearinfraredpolarimetricdetection AT yifangchen allsiphotodetectorswitharesonantcavityfornearinfraredpolarimetricdetection |
_version_ |
1724888091470069760 |