All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric Detection

Abstract This work developed an all-Si photodetector with a surface plasmonic resonator formed by a sub-wavelength Au grating on the top of a Si-nanowire array and the same one beside the wires. The Au/Si interface with a Schottky barrier allows the photo-electron detection in near-infrared waveleng...

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Main Authors: Bo Feng, Jingyuan Zhu, Chen Xu, Jing Wan, Zelong Gan, Bingrui Lu, Yifang Chen
Format: Article
Language:English
Published: SpringerOpen 2019-01-01
Series:Nanoscale Research Letters
Subjects:
Online Access:http://link.springer.com/article/10.1186/s11671-019-2868-3
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spelling doaj-d020115dec5a46eeb011e6ca521332da2020-11-25T02:17:06ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-01-011411910.1186/s11671-019-2868-3All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric DetectionBo Feng0Jingyuan Zhu1Chen Xu2Jing Wan3Zelong Gan4Bingrui Lu5Yifang Chen6Fudan UniversityFudan UniversityFudan UniversityFudan UniversityJiHua LaboratoryFudan UniversityNanolithography and Application Research Group, State Key Lab of Asic and System, Fudan UniversityAbstract This work developed an all-Si photodetector with a surface plasmonic resonator formed by a sub-wavelength Au grating on the top of a Si-nanowire array and the same one beside the wires. The Au/Si interface with a Schottky barrier allows the photo-electron detection in near-infrared wavelength based on the internal emission of hot electrons generated by the surface plasmons in the cavity. Meanwhile, the Au sub-wavelength grating on the Si nanowire array acts as a polarizer for polarimetric detection. Finite-difference time-domain method was applied in the design of the novel device and state-of-art nanofabrication based on electron beam lithography was carried out. The characterization of the photo-electronic properties as well as the polarimetric detection demonstrate that the fabricated detectors on the silicon substrate possesses great prospects for sensing technology on all-Si.http://link.springer.com/article/10.1186/s11671-019-2868-3All-Si photodetectorInternal emission of hot electronsSurface plasmonic resonatorPolarimetric detectionNanofabrication
collection DOAJ
language English
format Article
sources DOAJ
author Bo Feng
Jingyuan Zhu
Chen Xu
Jing Wan
Zelong Gan
Bingrui Lu
Yifang Chen
spellingShingle Bo Feng
Jingyuan Zhu
Chen Xu
Jing Wan
Zelong Gan
Bingrui Lu
Yifang Chen
All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric Detection
Nanoscale Research Letters
All-Si photodetector
Internal emission of hot electrons
Surface plasmonic resonator
Polarimetric detection
Nanofabrication
author_facet Bo Feng
Jingyuan Zhu
Chen Xu
Jing Wan
Zelong Gan
Bingrui Lu
Yifang Chen
author_sort Bo Feng
title All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric Detection
title_short All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric Detection
title_full All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric Detection
title_fullStr All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric Detection
title_full_unstemmed All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric Detection
title_sort all-si photodetectors with a resonant cavity for near-infrared polarimetric detection
publisher SpringerOpen
series Nanoscale Research Letters
issn 1931-7573
1556-276X
publishDate 2019-01-01
description Abstract This work developed an all-Si photodetector with a surface plasmonic resonator formed by a sub-wavelength Au grating on the top of a Si-nanowire array and the same one beside the wires. The Au/Si interface with a Schottky barrier allows the photo-electron detection in near-infrared wavelength based on the internal emission of hot electrons generated by the surface plasmons in the cavity. Meanwhile, the Au sub-wavelength grating on the Si nanowire array acts as a polarizer for polarimetric detection. Finite-difference time-domain method was applied in the design of the novel device and state-of-art nanofabrication based on electron beam lithography was carried out. The characterization of the photo-electronic properties as well as the polarimetric detection demonstrate that the fabricated detectors on the silicon substrate possesses great prospects for sensing technology on all-Si.
topic All-Si photodetector
Internal emission of hot electrons
Surface plasmonic resonator
Polarimetric detection
Nanofabrication
url http://link.springer.com/article/10.1186/s11671-019-2868-3
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