The Impact of Al<i>x</i>Ga1−<i>x</i>N Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Si<i>x</i>-Inch MCZ Si Substrate

The Impact of Al<i>x</i>Ga1−<i>x</i>N Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Si<i>x</i>-Inch MCZ Si Substrate

In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with AlGaN back barriers (B.B.) were comprehensively investigated based on the different Al mole fractions and thicknesses in the design of the experiments. It was shown that the off-state leakage current can be suppressed following...

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Bibliographic Details
Main Authors: H.Y. Wang, H.C. Chiu, W.C. Hsu, C.M. Liu, C.Y. Chuang, J.Z. Liu, Y.L. Huang
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Coatings
Subjects:
GaN
HEMT
microwave device
AlGaN back barrier
Online Access:https://www.mdpi.com/2079-6412/10/6/570

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