SIMULATION OF THE EFFECT OF TEMPERATURE, DEFECT DENSITY AND ABSORBANT THICKNESS ON CIS BASED SOLAR CELLS WITH SCAPS-1D SOFTWARE
In this paper, the performance of CIS Based solar cells was investigated, using a simulation program named SCAPS-1D Software (Solar Cells Capacitance Simulator). CIS cell structure is based on Cu(In, Ga), (Se,S)2; which is a semiconductor compound as an absorber layer; un-doped Zinc Oxyd (i) ZnO as...
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University of Oradea
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doaj-cf4fecff254e40acbafed1c8eb8fe6012021-03-05T13:20:22ZengUniversity of OradeaJournal of Sustainable Energy2067-55342067-55342020-12-011125863SIMULATION OF THE EFFECT OF TEMPERATURE, DEFECT DENSITY AND ABSORBANT THICKNESS ON CIS BASED SOLAR CELLS WITH SCAPS-1D SOFTWAREEL FARRI H.0BOUACHRI M.1FAHOUME M.2Department of Physic, Ibn Tofail UniversityDepartment of Physic, Ibn Tofail UniversityDepartment of Physic, Ibn Tofail UniversityIn this paper, the performance of CIS Based solar cells was investigated, using a simulation program named SCAPS-1D Software (Solar Cells Capacitance Simulator). CIS cell structure is based on Cu(In, Ga), (Se,S)2; which is a semiconductor compound as an absorber layer; un-doped Zinc Oxyd (i) ZnO as a window layer, and Sulfide Cadmium as a Buffer layer, with an efficiency of ƞ=17%. We studied the influence of different layers’ thickness and their defect densities, working temperature and absorber carrier density on the CIS based solar cells. The photovoltaic parameters have been calculated, and we have obtained the optimal values of every constraint cited above. As a result, we obtained a new high efficiency value of 19.71%, under air mass (AM) 1.5 and 100 mW/cm2 illumination and the area of this device was 0.15 cm2[8]http://www.energy-cie.ro/archives/2020/nr_2/v11-n2-1.pdfsolar cellsscaps-1ddefect densityphotovoltaic parameters |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
EL FARRI H. BOUACHRI M. FAHOUME M. |
spellingShingle |
EL FARRI H. BOUACHRI M. FAHOUME M. SIMULATION OF THE EFFECT OF TEMPERATURE, DEFECT DENSITY AND ABSORBANT THICKNESS ON CIS BASED SOLAR CELLS WITH SCAPS-1D SOFTWARE Journal of Sustainable Energy solar cells scaps-1d defect density photovoltaic parameters |
author_facet |
EL FARRI H. BOUACHRI M. FAHOUME M. |
author_sort |
EL FARRI H. |
title |
SIMULATION OF THE EFFECT OF TEMPERATURE, DEFECT DENSITY AND ABSORBANT THICKNESS ON CIS BASED SOLAR CELLS WITH SCAPS-1D SOFTWARE |
title_short |
SIMULATION OF THE EFFECT OF TEMPERATURE, DEFECT DENSITY AND ABSORBANT THICKNESS ON CIS BASED SOLAR CELLS WITH SCAPS-1D SOFTWARE |
title_full |
SIMULATION OF THE EFFECT OF TEMPERATURE, DEFECT DENSITY AND ABSORBANT THICKNESS ON CIS BASED SOLAR CELLS WITH SCAPS-1D SOFTWARE |
title_fullStr |
SIMULATION OF THE EFFECT OF TEMPERATURE, DEFECT DENSITY AND ABSORBANT THICKNESS ON CIS BASED SOLAR CELLS WITH SCAPS-1D SOFTWARE |
title_full_unstemmed |
SIMULATION OF THE EFFECT OF TEMPERATURE, DEFECT DENSITY AND ABSORBANT THICKNESS ON CIS BASED SOLAR CELLS WITH SCAPS-1D SOFTWARE |
title_sort |
simulation of the effect of temperature, defect density and absorbant thickness on cis based solar cells with scaps-1d software |
publisher |
University of Oradea |
series |
Journal of Sustainable Energy |
issn |
2067-5534 2067-5534 |
publishDate |
2020-12-01 |
description |
In this paper, the performance of CIS Based solar cells was investigated, using a simulation program named SCAPS-1D Software (Solar Cells Capacitance Simulator). CIS cell structure is based on Cu(In, Ga), (Se,S)2; which is a semiconductor compound as an absorber layer; un-doped Zinc Oxyd (i) ZnO as a window layer, and Sulfide Cadmium as a Buffer layer, with an efficiency of ƞ=17%. We studied the influence of different layers’ thickness and their defect densities, working temperature and absorber carrier density on the CIS based solar cells. The photovoltaic parameters have been calculated, and we have obtained the optimal values of every constraint cited above. As a result, we obtained a new high efficiency value of 19.71%, under air mass (AM) 1.5 and 100 mW/cm2 illumination and the area of this device was 0.15 cm2[8] |
topic |
solar cells scaps-1d defect density photovoltaic parameters |
url |
http://www.energy-cie.ro/archives/2020/nr_2/v11-n2-1.pdf |
work_keys_str_mv |
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