SIMULATION OF THE EFFECT OF TEMPERATURE, DEFECT DENSITY AND ABSORBANT THICKNESS ON CIS BASED SOLAR CELLS WITH SCAPS-1D SOFTWARE
In this paper, the performance of CIS Based solar cells was investigated, using a simulation program named SCAPS-1D Software (Solar Cells Capacitance Simulator). CIS cell structure is based on Cu(In, Ga), (Se,S)2; which is a semiconductor compound as an absorber layer; un-doped Zinc Oxyd (i) ZnO as...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
University of Oradea
2020-12-01
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| Series: | Journal of Sustainable Energy |
| Subjects: | |
| Online Access: | http://www.energy-cie.ro/archives/2020/nr_2/v11-n2-1.pdf |
| Summary: | In this paper, the performance of CIS Based solar cells was investigated, using a simulation program named SCAPS-1D Software (Solar Cells Capacitance Simulator). CIS cell structure is based on Cu(In, Ga), (Se,S)2; which is a semiconductor compound as an absorber layer; un-doped Zinc Oxyd (i) ZnO as a window layer, and Sulfide Cadmium as a Buffer layer, with an efficiency of ƞ=17%. We studied the influence of different layers’ thickness and their defect densities, working temperature and absorber carrier density on the CIS based solar cells. The photovoltaic parameters have been calculated, and we have obtained the optimal values of every constraint cited above. As a result, we obtained a new high efficiency value of 19.71%, under air mass (AM) 1.5 and 100 mW/cm2 illumination and the area of this device was 0.15 cm2[8] |
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| ISSN: | 2067-5534 2067-5534 |