Electric properties of the interface quantum dot - matrix
A theoretical research is presented concerning the potential distribution and electric field intensity in the InAs/GaAs nanoheterosystem with InAs QDs within the framework of self-consistent electron-deformation model. It is shown that at the strained border between a quantum dot and matrix there is...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Institute for Condensed Matter Physics
2009-01-01
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| Series: | Condensed Matter Physics |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.5488/CMP.12.2.215 |
| Summary: | A theoretical research is presented concerning the potential distribution and electric field intensity in the InAs/GaAs nanoheterosystem with InAs QDs within the framework of self-consistent electron-deformation model. It is shown that at the strained border between a quantum dot and matrix there is a double electric layer, that is n<sup>+</sup>-n junction. |
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| ISSN: | 1607-324X |