Reduction of interface states by hydrogen treatment at the aluminum oxide/4H-SiC Si-face interface
Processes to form aluminum oxide as a gate insulator on the 4H-SiC Si-face are investigated to eliminate the interface state density (DIT) and improve the mobility. Processes that do not involve the insertion or formation of SiO2 at the interface are preferential to eliminate traps that may be prese...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4966041 |