Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory

Two-terminal (2-T) thyristor random access memory (TRAM) based on nanoscale cross-point vertical array is investigated in terms of lengths and doping concentrations of storage regions for long data retention time (Tret). For high device scalability and low program voltage (VP), lengths of the storag...

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Main Authors: Hyangwoo Kim, Hyeonsu Cho, Byoung Don Kong, Jin-Woo Kim, Meyya Meyyappan, Chang-Ki Baek
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Open Journal of Nanotechnology
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9285172/
id doaj-ceed4ce738f64009a1ec00e5f96e058c
record_format Article
spelling doaj-ceed4ce738f64009a1ec00e5f96e058c2021-03-29T19:00:09ZengIEEEIEEE Open Journal of Nanotechnology2644-12922020-01-01116316910.1109/OJNANO.2020.30428049285172Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access MemoryHyangwoo Kim0https://orcid.org/0000-0002-4563-2533Hyeonsu Cho1https://orcid.org/0000-0002-8779-5816Byoung Don Kong2https://orcid.org/0000-0003-4072-4399Jin-Woo Kim3https://orcid.org/0000-0002-7119-8208Meyya Meyyappan4https://orcid.org/0000-0001-9202-412XChang-Ki Baek5https://orcid.org/0000-0002-2852-6683Department of Creative IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South KoreaDepartment of Creative IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South KoreaDepartment of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South KoreaDepartment of Biological and Agricultural Engineering and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USANASA Ames Research Center, Mountain View, CA, USADepartment of Creative IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South KoreaTwo-terminal (2-T) thyristor random access memory (TRAM) based on nanoscale cross-point vertical array is investigated in terms of lengths and doping concentrations of storage regions for long data retention time (Tret). For high device scalability and low program voltage (VP), lengths of the storage regions are determined by the sum of depletion widths of N- and P-storage regions. When doping concentrations of two storage regions are equal to each other at 10<sup>18</sup> cm<sup>-3</sup>, 2-T TRAM exhibits the longest Tret of 100 ms and the lowest impact ionization of the device can suppress various reliability issues such as hot carrier injection and junction degradation. Although Tret of 2-T TRAM can be reduced from 100 ms to 1.5 ms due to decreased read voltage with operating temperature rising from 300 K to 360 K, Tret can be further improved to &gt;10 s by applying standby voltage (Vstandby). The effective way to set minimum Vstandby is presented using the IA-VA characteristics with 1000-s fall time. Moreover, the optimal Vstandby is set to 0.60 V by considering disturbance in array operation. Consequently, the proposed design and operation guidelines can provide a pathway to realize nanoscale 2-T TRAM for capacitor-less 4F<sup>2</sup> 1T DRAM technology.https://ieeexplore.ieee.org/document/9285172/DRAM Chipsthyristor applicationsmemory architecturesemiconductor devicessemiconductor device modeling
collection DOAJ
language English
format Article
sources DOAJ
author Hyangwoo Kim
Hyeonsu Cho
Byoung Don Kong
Jin-Woo Kim
Meyya Meyyappan
Chang-Ki Baek
spellingShingle Hyangwoo Kim
Hyeonsu Cho
Byoung Don Kong
Jin-Woo Kim
Meyya Meyyappan
Chang-Ki Baek
Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory
IEEE Open Journal of Nanotechnology
DRAM Chips
thyristor applications
memory architecture
semiconductor devices
semiconductor device modeling
author_facet Hyangwoo Kim
Hyeonsu Cho
Byoung Don Kong
Jin-Woo Kim
Meyya Meyyappan
Chang-Ki Baek
author_sort Hyangwoo Kim
title Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory
title_short Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory
title_full Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory
title_fullStr Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory
title_full_unstemmed Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory
title_sort electrical and data-retention characteristics of two-terminal thyristor random access memory
publisher IEEE
series IEEE Open Journal of Nanotechnology
issn 2644-1292
publishDate 2020-01-01
description Two-terminal (2-T) thyristor random access memory (TRAM) based on nanoscale cross-point vertical array is investigated in terms of lengths and doping concentrations of storage regions for long data retention time (Tret). For high device scalability and low program voltage (VP), lengths of the storage regions are determined by the sum of depletion widths of N- and P-storage regions. When doping concentrations of two storage regions are equal to each other at 10<sup>18</sup> cm<sup>-3</sup>, 2-T TRAM exhibits the longest Tret of 100 ms and the lowest impact ionization of the device can suppress various reliability issues such as hot carrier injection and junction degradation. Although Tret of 2-T TRAM can be reduced from 100 ms to 1.5 ms due to decreased read voltage with operating temperature rising from 300 K to 360 K, Tret can be further improved to &gt;10 s by applying standby voltage (Vstandby). The effective way to set minimum Vstandby is presented using the IA-VA characteristics with 1000-s fall time. Moreover, the optimal Vstandby is set to 0.60 V by considering disturbance in array operation. Consequently, the proposed design and operation guidelines can provide a pathway to realize nanoscale 2-T TRAM for capacitor-less 4F<sup>2</sup> 1T DRAM technology.
topic DRAM Chips
thyristor applications
memory architecture
semiconductor devices
semiconductor device modeling
url https://ieeexplore.ieee.org/document/9285172/
work_keys_str_mv AT hyangwookim electricalanddataretentioncharacteristicsoftwoterminalthyristorrandomaccessmemory
AT hyeonsucho electricalanddataretentioncharacteristicsoftwoterminalthyristorrandomaccessmemory
AT byoungdonkong electricalanddataretentioncharacteristicsoftwoterminalthyristorrandomaccessmemory
AT jinwookim electricalanddataretentioncharacteristicsoftwoterminalthyristorrandomaccessmemory
AT meyyameyyappan electricalanddataretentioncharacteristicsoftwoterminalthyristorrandomaccessmemory
AT changkibaek electricalanddataretentioncharacteristicsoftwoterminalthyristorrandomaccessmemory
_version_ 1724196191564988416