Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory
Two-terminal (2-T) thyristor random access memory (TRAM) based on nanoscale cross-point vertical array is investigated in terms of lengths and doping concentrations of storage regions for long data retention time (Tret). For high device scalability and low program voltage (VP), lengths of the storag...
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doaj-ceed4ce738f64009a1ec00e5f96e058c2021-03-29T19:00:09ZengIEEEIEEE Open Journal of Nanotechnology2644-12922020-01-01116316910.1109/OJNANO.2020.30428049285172Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access MemoryHyangwoo Kim0https://orcid.org/0000-0002-4563-2533Hyeonsu Cho1https://orcid.org/0000-0002-8779-5816Byoung Don Kong2https://orcid.org/0000-0003-4072-4399Jin-Woo Kim3https://orcid.org/0000-0002-7119-8208Meyya Meyyappan4https://orcid.org/0000-0001-9202-412XChang-Ki Baek5https://orcid.org/0000-0002-2852-6683Department of Creative IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South KoreaDepartment of Creative IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South KoreaDepartment of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South KoreaDepartment of Biological and Agricultural Engineering and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USANASA Ames Research Center, Mountain View, CA, USADepartment of Creative IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South KoreaTwo-terminal (2-T) thyristor random access memory (TRAM) based on nanoscale cross-point vertical array is investigated in terms of lengths and doping concentrations of storage regions for long data retention time (Tret). For high device scalability and low program voltage (VP), lengths of the storage regions are determined by the sum of depletion widths of N- and P-storage regions. When doping concentrations of two storage regions are equal to each other at 10<sup>18</sup> cm<sup>-3</sup>, 2-T TRAM exhibits the longest Tret of 100 ms and the lowest impact ionization of the device can suppress various reliability issues such as hot carrier injection and junction degradation. Although Tret of 2-T TRAM can be reduced from 100 ms to 1.5 ms due to decreased read voltage with operating temperature rising from 300 K to 360 K, Tret can be further improved to >10 s by applying standby voltage (Vstandby). The effective way to set minimum Vstandby is presented using the IA-VA characteristics with 1000-s fall time. Moreover, the optimal Vstandby is set to 0.60 V by considering disturbance in array operation. Consequently, the proposed design and operation guidelines can provide a pathway to realize nanoscale 2-T TRAM for capacitor-less 4F<sup>2</sup> 1T DRAM technology.https://ieeexplore.ieee.org/document/9285172/DRAM Chipsthyristor applicationsmemory architecturesemiconductor devicessemiconductor device modeling |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Hyangwoo Kim Hyeonsu Cho Byoung Don Kong Jin-Woo Kim Meyya Meyyappan Chang-Ki Baek |
spellingShingle |
Hyangwoo Kim Hyeonsu Cho Byoung Don Kong Jin-Woo Kim Meyya Meyyappan Chang-Ki Baek Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory IEEE Open Journal of Nanotechnology DRAM Chips thyristor applications memory architecture semiconductor devices semiconductor device modeling |
author_facet |
Hyangwoo Kim Hyeonsu Cho Byoung Don Kong Jin-Woo Kim Meyya Meyyappan Chang-Ki Baek |
author_sort |
Hyangwoo Kim |
title |
Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory |
title_short |
Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory |
title_full |
Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory |
title_fullStr |
Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory |
title_full_unstemmed |
Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory |
title_sort |
electrical and data-retention characteristics of two-terminal thyristor random access memory |
publisher |
IEEE |
series |
IEEE Open Journal of Nanotechnology |
issn |
2644-1292 |
publishDate |
2020-01-01 |
description |
Two-terminal (2-T) thyristor random access memory (TRAM) based on nanoscale cross-point vertical array is investigated in terms of lengths and doping concentrations of storage regions for long data retention time (Tret). For high device scalability and low program voltage (VP), lengths of the storage regions are determined by the sum of depletion widths of N- and P-storage regions. When doping concentrations of two storage regions are equal to each other at 10<sup>18</sup> cm<sup>-3</sup>, 2-T TRAM exhibits the longest Tret of 100 ms and the lowest impact ionization of the device can suppress various reliability issues such as hot carrier injection and junction degradation. Although Tret of 2-T TRAM can be reduced from 100 ms to 1.5 ms due to decreased read voltage with operating temperature rising from 300 K to 360 K, Tret can be further improved to >10 s by applying standby voltage (Vstandby). The effective way to set minimum Vstandby is presented using the IA-VA characteristics with 1000-s fall time. Moreover, the optimal Vstandby is set to 0.60 V by considering disturbance in array operation. Consequently, the proposed design and operation guidelines can provide a pathway to realize nanoscale 2-T TRAM for capacitor-less 4F<sup>2</sup> 1T DRAM technology. |
topic |
DRAM Chips thyristor applications memory architecture semiconductor devices semiconductor device modeling |
url |
https://ieeexplore.ieee.org/document/9285172/ |
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