Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory

Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory

Two-terminal (2-T) thyristor random access memory (TRAM) based on nanoscale cross-point vertical array is investigated in terms of lengths and doping concentrations of storage regions for long data retention time (Tret). For high device scalability and low program voltage (VP), lengths of the storag...

Full description

Bibliographic Details
Main Authors: Hyangwoo Kim, Hyeonsu Cho, Byoung Don Kong, Jin-Woo Kim, Meyya Meyyappan, Chang-Ki Baek
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Open Journal of Nanotechnology
Subjects:
DRAM Chips
thyristor applications
memory architecture
semiconductor devices
semiconductor device modeling
Online Access:https://ieeexplore.ieee.org/document/9285172/

Internet

https://ieeexplore.ieee.org/document/9285172/

Similar Items