Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar ( 11 2 ̄ 2 ) GaN templates
We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN( 11 2...
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4914102 |
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doaj-ce833cb1804349708bcd7e819537041f2020-11-24T21:09:35ZengAIP Publishing LLCAPL Materials2166-532X2015-03-0133036102036102-510.1063/1.4914102003503APMElectron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar ( 11 2 ̄ 2 ) GaN templatesM. Niehle0A. Trampert1S. Albert2A. Bengoechea-Encabo3E. Calleja4Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, GermanyPaul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, GermanyISOM and Departamento de Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, SpainISOM and Departamento de Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, SpainISOM and Departamento de Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN( 11 2 ̄ 2 ) substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,Ga)N layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes. http://dx.doi.org/10.1063/1.4914102 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
M. Niehle A. Trampert S. Albert A. Bengoechea-Encabo E. Calleja |
| spellingShingle |
M. Niehle A. Trampert S. Albert A. Bengoechea-Encabo E. Calleja Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar ( 11 2 ̄ 2 ) GaN templates APL Materials |
| author_facet |
M. Niehle A. Trampert S. Albert A. Bengoechea-Encabo E. Calleja |
| author_sort |
M. Niehle |
| title |
Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (
11
2
̄
2
) GaN templates |
| title_short |
Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (
11
2
̄
2
) GaN templates |
| title_full |
Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (
11
2
̄
2
) GaN templates |
| title_fullStr |
Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (
11
2
̄
2
) GaN templates |
| title_full_unstemmed |
Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (
11
2
̄
2
) GaN templates |
| title_sort |
electron tomography of (in,ga)n insertions in gan nanocolumns grown on semi-polar (
11
2
̄
2
) gan templates |
| publisher |
AIP Publishing LLC |
| series |
APL Materials |
| issn |
2166-532X |
| publishDate |
2015-03-01 |
| description |
We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN(
11
2
̄
2
) substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,Ga)N layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes.
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| url |
http://dx.doi.org/10.1063/1.4914102 |
| work_keys_str_mv |
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