UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study

UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study

We report a combined experimental and theoretical study on the optoelectronic properties of α-SnWO4 for UV-Vis excitation. The experimentally measured values for thin films were systematically compared with high-accuracy density functional theory and density functional perturbation theory using the...

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Main Authors: Ahmed Ziani, Moussab Harb, Dalal Noureldine, Kazuhiro Takanabe
Format: Article
Language:English
Published: AIP Publishing LLC 2015-09-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4930005
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spelling doaj-ce3483075d39436b8412c016909138e82020-11-25T01:03:31ZengAIP Publishing LLCAPL Materials2166-532X2015-09-0139096101096101-510.1063/1.4930005001509APMUV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based studyAhmed Ziani0Moussab Harb1Dalal Noureldine2Kazuhiro Takanabe3Division of Physical Sciences and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology (KAUST), Thuwal, Makkah 23955-6900, Saudi ArabiaDivision of Physical Sciences and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology (KAUST), Thuwal, Makkah 23955-6900, Saudi ArabiaDivision of Physical Sciences and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology (KAUST), Thuwal, Makkah 23955-6900, Saudi ArabiaDivision of Physical Sciences and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology (KAUST), Thuwal, Makkah 23955-6900, Saudi ArabiaWe report a combined experimental and theoretical study on the optoelectronic properties of α-SnWO4 for UV-Vis excitation. The experimentally measured values for thin films were systematically compared with high-accuracy density functional theory and density functional perturbation theory using the HSE06 functional. The α-SnWO4 material shows an indirect bandgap of 1.52 eV with high absorption coefficient in the visible-light range (>2 × 105 cm−1). The results show relatively high dielectric constant (>30) and weak diffusion properties (large effective masses) of excited carriers.http://dx.doi.org/10.1063/1.4930005
collection DOAJ
language English
format Article
sources DOAJ
author Ahmed Ziani
Moussab Harb
Dalal Noureldine
Kazuhiro Takanabe
spellingShingle Ahmed Ziani
Moussab Harb
Dalal Noureldine
Kazuhiro Takanabe
UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study
APL Materials
author_facet Ahmed Ziani
Moussab Harb
Dalal Noureldine
Kazuhiro Takanabe
author_sort Ahmed Ziani
title UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study
title_short UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study
title_full UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study
title_fullStr UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study
title_full_unstemmed UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study
title_sort uv-vis optoelectronic properties of α-snwo4: a comparative experimental and density functional theory based study
publisher AIP Publishing LLC
series APL Materials
issn 2166-532X
publishDate 2015-09-01
description We report a combined experimental and theoretical study on the optoelectronic properties of α-SnWO4 for UV-Vis excitation. The experimentally measured values for thin films were systematically compared with high-accuracy density functional theory and density functional perturbation theory using the HSE06 functional. The α-SnWO4 material shows an indirect bandgap of 1.52 eV with high absorption coefficient in the visible-light range (>2 × 105 cm−1). The results show relatively high dielectric constant (>30) and weak diffusion properties (large effective masses) of excited carriers.
url http://dx.doi.org/10.1063/1.4930005
work_keys_str_mv AT ahmedziani uvvisoptoelectronicpropertiesofasnwo4acomparativeexperimentalanddensityfunctionaltheorybasedstudy
AT moussabharb uvvisoptoelectronicpropertiesofasnwo4acomparativeexperimentalanddensityfunctionaltheorybasedstudy
AT dalalnoureldine uvvisoptoelectronicpropertiesofasnwo4acomparativeexperimentalanddensityfunctionaltheorybasedstudy
AT kazuhirotakanabe uvvisoptoelectronicpropertiesofasnwo4acomparativeexperimentalanddensityfunctionaltheorybasedstudy
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