Formation Energies of Antiphase Boundaries in GaAs and GaP: An ab Initio Study

Formation Energies of Antiphase Boundaries in GaAs and GaP: An ab Initio Study

Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V heterostructures on silicon or germanium substrates. The formation energies of {110}, {111}, {112}...

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Bibliographic Details
Main Authors: Oleg Rubel, Sergei D. Baranovskii
Format: Article
Language:English
Published: MDPI AG 2009-11-01
Series:International Journal of Molecular Sciences
Subjects:
antiphase boundary
III-V semiconductors
formation energy
density-functional theory
Online Access:http://www.mdpi.com/1422-0067/10/12/5104/

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http://www.mdpi.com/1422-0067/10/12/5104/

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