Inversion Charge Boost and Transient Steep-Slope Induced by Free-Charge-Polarization Mismatch in a Ferroelectric-Metal–Oxide–Semiconductor Capacitor
In this paper, the transient behavior of a ferroelectric (FE)-metal-oxide-semiconductor (MOS) capacitor is theoretically investigated with a series resistor. It is shown that compared with a conventional high-k dielectric MOS capacitor, a significant inversion charge boost can be achieved by an FE M...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8379543/ |