A Two-Stage X-Band 20.7-dBm Power Amplifier in 40-nm CMOS Technology

A Two-Stage X-Band 20.7-dBm Power Amplifier in 40-nm CMOS Technology

For higher integration density, X-band power amplifiers (PAs) with CMOS technology have been widely discussed in recent publications. However, with reduced power supply voltage and device size, it is a great challenge to design a compact PA with high output power and power-added efficiency (PAE). In...

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Bibliographic Details
Main Authors: Zhichao Li, Shiheng Yang, Samuel B.S. Lee, Kiat Seng Yeo
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Electronics
Subjects:
power amplifier (PA)
X-band
CMOS
40-nm
neutralization
differential
Online Access:https://www.mdpi.com/2079-9292/9/12/2198

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