Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application

Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application

This paper reports a detailed analysis of the drain current modulation of a single-drain normal-gate n channel metal-oxide semiconductor field effect transistor (n-MOSFET) under an on-chip magnetic field. A single-drain n-MOSFET has been fabricated and placed in the center of a square-shaped metal l...

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Bibliographic Details
Main Authors: Prasenjit Chatterjee, Hwang-Cherng Chow, Wu-Shiung Feng
Format: Article
Language:English
Published: MDPI AG 2016-08-01
Series:Sensors
Subjects:
MOSFET
magnetic sensor
Lorentz force
Online Access:http://www.mdpi.com/1424-8220/16/9/1389

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