Fabrication and Characterization of High-Quality UV Photodetectors Based ZnO Nanorods Using Traditional and Modified Chemical Bath Deposition Methods

• Main Authors: Ahmed Fattah Abdulrahman, Sabah Mohammed Ahmed, Azeez Abdullah Barzinjy, Samir Mustafa Hamad, Naser Mahmoud Ahmed, Munirah Abullah Almessiere
• Format: Article
• Language: English
• Published: MDPI AG 2021-03-01
• Series: Nanomaterials
• Subjects: UV photodetectors; ZnO nanorods; M-CBD; growth duration; RF sputtering
• Online Access: https://www.mdpi.com/2079-4991/11/3/677

Ultraviolet (UV) photodetectors (PDs) based on high-quality well-aligned ZnO nanorods (NRs) were fabricated using both modified and conventional chemical bath deposition (CBD) methods. The modified chemical bath deposition (M-CBD) method was made by adding air bubbles to the growth solution during the CBD process. The viability and effectiveness of M-CBD were examined by developing UV PDs based on ZnO NRs. The ZnO nano-seed layer was coated on a glass substrate utilizing radiofrequency (RF) sputtering. The impact of the different growth-times on morphology, growth rate, crystal structure, and optical and chemical properties were investigated systematically using different characterization techniques, such as field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) analysis, UV–VIS double beam spectrometer, and energy dispersive X-ray analysis (EDX), respectively. The Al/ZnO UV PDs based on ZnO nanorods were fabricated with optimum growth conditions through the two methods of preparation. This study showed that the synthesized ZnO NRs using the M-CBD method for different growth times possess better properties than the conventional method under similar deposition conditions. Despite having the highest aspect ratio and growth rate of ZnO NRs, which were found at 4 h growth duration for both methods, the aspect ratio of ZnO NRs using the M-CBD technique was comparatively higher than the conventional CBD method. Besides, the UV PDs fabricated by the M-CBD method at 5 V bias voltage showed high sensitivity, short response time, quick recovery time, high gain, low dark current, and high photocurrent compared with the UV PD device fabricated by the conventional CBD method.