Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane

Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane

Methylsilane-derived fragment ions obtained from a Bernas-type ion source were investigated using a low-energy mass-selected ion beam system. Based on mass-energy analyzer measurements, these ions were determined to be H+, H2+, H3+, CH3+, Si+, and SiCH5+. The SiCH5+ ions were selected and injected i...

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Main Authors: Satoru Yoshimura, Satoshi Sugimoto, Takae Takeuchi, Kensuke Murai, Masato Kiuchi
Format: Article
Language:English
Published: AIP Publishing LLC 2019-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5116614
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spelling doaj-cc598c190a244d3cb8b0471add8bb13c2020-11-24T21:48:05ZengAIP Publishing LLCAIP Advances2158-32262019-09-0199095051095051-410.1063/1.5116614073909ADVLow-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilaneSatoru Yoshimura0Satoshi Sugimoto1Takae Takeuchi2Kensuke Murai3Masato Kiuchi4Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, JapanCenter for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, JapanDepartment of Chemistry, Nara Women’s University, Kitauoyanishi-machi, Nara, Nara 630-8506, JapanNational Institute of Advanced Industrial Science and Technology (AIST), Ikeda, Osaka 563-8577, JapanNational Institute of Advanced Industrial Science and Technology (AIST), Ikeda, Osaka 563-8577, JapanMethylsilane-derived fragment ions obtained from a Bernas-type ion source were investigated using a low-energy mass-selected ion beam system. Based on mass-energy analyzer measurements, these ions were determined to be H+, H2+, H3+, CH3+, Si+, and SiCH5+. The SiCH5+ ions were selected and injected into a Si(111) substrate at 750 °C. The ion energy was 40 eV. This injection led to the formation of a silicon carbide film on the Si substrate. An analysis of this film indicates that this type of ion beam deposition method can efficiently form silicon carbide film.http://dx.doi.org/10.1063/1.5116614
collection DOAJ
language English
format Article
sources DOAJ
author Satoru Yoshimura
Satoshi Sugimoto
Takae Takeuchi
Kensuke Murai
Masato Kiuchi
spellingShingle Satoru Yoshimura
Satoshi Sugimoto
Takae Takeuchi
Kensuke Murai
Masato Kiuchi
Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane
AIP Advances
author_facet Satoru Yoshimura
Satoshi Sugimoto
Takae Takeuchi
Kensuke Murai
Masato Kiuchi
author_sort Satoru Yoshimura
title Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane
title_short Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane
title_full Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane
title_fullStr Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane
title_full_unstemmed Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane
title_sort low-energy mass-selected ion beam deposition of silicon carbide with bernas-type ion source using methylsilane
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2019-09-01
description Methylsilane-derived fragment ions obtained from a Bernas-type ion source were investigated using a low-energy mass-selected ion beam system. Based on mass-energy analyzer measurements, these ions were determined to be H+, H2+, H3+, CH3+, Si+, and SiCH5+. The SiCH5+ ions were selected and injected into a Si(111) substrate at 750 °C. The ion energy was 40 eV. This injection led to the formation of a silicon carbide film on the Si substrate. An analysis of this film indicates that this type of ion beam deposition method can efficiently form silicon carbide film.
url http://dx.doi.org/10.1063/1.5116614
work_keys_str_mv AT satoruyoshimura lowenergymassselectedionbeamdepositionofsiliconcarbidewithbernastypeionsourceusingmethylsilane
AT satoshisugimoto lowenergymassselectedionbeamdepositionofsiliconcarbidewithbernastypeionsourceusingmethylsilane
AT takaetakeuchi lowenergymassselectedionbeamdepositionofsiliconcarbidewithbernastypeionsourceusingmethylsilane
AT kensukemurai lowenergymassselectedionbeamdepositionofsiliconcarbidewithbernastypeionsourceusingmethylsilane
AT masatokiuchi lowenergymassselectedionbeamdepositionofsiliconcarbidewithbernastypeionsourceusingmethylsilane
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