Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane
Methylsilane-derived fragment ions obtained from a Bernas-type ion source were investigated using a low-energy mass-selected ion beam system. Based on mass-energy analyzer measurements, these ions were determined to be H+, H2+, H3+, CH3+, Si+, and SiCH5+. The SiCH5+ ions were selected and injected i...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5116614 |
| Summary: | Methylsilane-derived fragment ions obtained from a Bernas-type ion source were investigated using a low-energy mass-selected ion beam system. Based on mass-energy analyzer measurements, these ions were determined to be H+, H2+, H3+, CH3+, Si+, and SiCH5+. The SiCH5+ ions were selected and injected into a Si(111) substrate at 750 °C. The ion energy was 40 eV. This injection led to the formation of a silicon carbide film on the Si substrate. An analysis of this film indicates that this type of ion beam deposition method can efficiently form silicon carbide film. |
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| ISSN: | 2158-3226 |