An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

Presently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and microwave characteristics of a GaN-based HEMT versus the ambient temperature using measured data, an equivalent-...

Full description

Bibliographic Details
Main Authors:	Mohammad Abdul Alim, Christophe Gaquiere, Giovanni Crupi
Format:	Article
Language:	English
Published:	MDPI AG 2021-05-01
Series:	Micromachines
Subjects:	gallium nitride (GaN) high electron-mobility transistor (HEMT) equivalent-circuit modeling microwave frequency scattering-parameter measurements temperature
Online Access:	https://www.mdpi.com/2072-666X/12/5/549

id	doaj-cc0f73729dfb4b439b0243bb21892a78
record_format	Article
spelling	doaj-cc0f73729dfb4b439b0243bb21892a782021-05-31T23:47:47ZengMDPI AGMicromachines2072-666X2021-05-011254954910.3390/mi12050549An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN TechnologyMohammad Abdul Alim0Christophe Gaquiere1Giovanni Crupi2Department of Electrical and Electronic Engineering, University of Chittagong, Chittagong 4331, BangladeshInstitute of Electronic, Microelectronic and Nanotechnology (IEMN), The University of Lille, F-59000 Lille, FranceDepartment of Biomedical and Dental Sciences and Morphofunctional Imaging, University of Messina, 98125 Messina, ItalyPresently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and microwave characteristics of a GaN-based HEMT versus the ambient temperature using measured data, an equivalent-circuit model, and a sensitivity-based analysis. The tested device is a 0.15-μm ultra-short gate-length AlGaN/GaN HEMT with a gate width of 200 μm. The interdigitated layout of this device is based on four fingers, each with a length of 50 μm. The scattering parameters are measured from 45 MHz to 50 GHz with the ambient temperature varied from −40 °C to 150 °C. A systematic study of the temperature-dependent performance is carried out by means of a sensitivity-based analysis. The achieved findings show that by the heating the transistor, the DC and microwave performance are degraded, due to the degradation in the electron transport properties.https://www.mdpi.com/2072-666X/12/5/549gallium nitride (GaN)high electron-mobility transistor (HEMT)equivalent-circuit modelingmicrowave frequencyscattering-parameter measurementstemperature
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Mohammad Abdul Alim Christophe Gaquiere Giovanni Crupi
spellingShingle	Mohammad Abdul Alim Christophe Gaquiere Giovanni Crupi An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology Micromachines gallium nitride (GaN) high electron-mobility transistor (HEMT) equivalent-circuit modeling microwave frequency scattering-parameter measurements temperature
author_facet	Mohammad Abdul Alim Christophe Gaquiere Giovanni Crupi
author_sort	Mohammad Abdul Alim
title	An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology
title_short	An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology
title_full	An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology
title_fullStr	An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology
title_full_unstemmed	An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology
title_sort	experimental and systematic insight into the temperature sensitivity for a 0.15-µm gate-length hemt based on the gan technology
publisher	MDPI AG
series	Micromachines
issn	2072-666X
publishDate	2021-05-01
description	Presently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and microwave characteristics of a GaN-based HEMT versus the ambient temperature using measured data, an equivalent-circuit model, and a sensitivity-based analysis. The tested device is a 0.15-μm ultra-short gate-length AlGaN/GaN HEMT with a gate width of 200 μm. The interdigitated layout of this device is based on four fingers, each with a length of 50 μm. The scattering parameters are measured from 45 MHz to 50 GHz with the ambient temperature varied from −40 °C to 150 °C. A systematic study of the temperature-dependent performance is carried out by means of a sensitivity-based analysis. The achieved findings show that by the heating the transistor, the DC and microwave performance are degraded, due to the degradation in the electron transport properties.
topic	gallium nitride (GaN) high electron-mobility transistor (HEMT) equivalent-circuit modeling microwave frequency scattering-parameter measurements temperature
url	https://www.mdpi.com/2072-666X/12/5/549
work_keys_str_mv	AT mohammadabdulalim anexperimentalandsystematicinsightintothetemperaturesensitivityfora015μmgatelengthhemtbasedonthegantechnology AT christophegaquiere anexperimentalandsystematicinsightintothetemperaturesensitivityfora015μmgatelengthhemtbasedonthegantechnology AT giovannicrupi anexperimentalandsystematicinsightintothetemperaturesensitivityfora015μmgatelengthhemtbasedonthegantechnology AT mohammadabdulalim experimentalandsystematicinsightintothetemperaturesensitivityfora015μmgatelengthhemtbasedonthegantechnology AT christophegaquiere experimentalandsystematicinsightintothetemperaturesensitivityfora015μmgatelengthhemtbasedonthegantechnology AT giovannicrupi experimentalandsystematicinsightintothetemperaturesensitivityfora015μmgatelengthhemtbasedonthegantechnology
_version_	1721416640493518848

An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

Similar Items